Mode-locked,high power, semiconductor FIR/sub-mm laser
Mode-locked,high power, semiconductor FIR/sub-mm laser
批准号:
9531933
负责人:
Robert Peale
金额:
$20.6万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1996
资助国家:
美国
项目状态:
已结题
起止时间:
1996-09-15 至 1999-08-31
中文摘要
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英文摘要
Proposal Number: ECS-9531933 Principal Investigator: Robert Peale/University of Central Florida Title: Mode-locked high power semiconductor FIR/sub-mm laser Abstract This research will develop a mode-locked high power semiconductor FIR/sub-mm laser, using p-Ge. The p-Ge laser is tunable for 70 to 200 mm where no other solid state laser is known. A clearer understanding of the carrier dynamics responsible for lasing will emerge via new experimental tests, especially a new and unusual temperature effect and the connection between cooling rate and emission dynamics. Development of a practical table-top high power laser in this source-poor region will have important ramifications for advancement in many fields, such as molecular and solid state spectroscopy, remote sensing and plasma diagnostics. High tunable tunable sources, other than FELS are especially lacking. Development of this laser as a compact source, made possible by replacing superconducting magnets with permanent magnets, is also important for practical applications.
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