Quantum Engineering of Metallic Thin Film Growth

9705406 Plummer这份联邦德国的提案在实验和理论上解决了一个涉及四所大学和ORNL研究人员的合作项目中的基本材料科学问题，结合专业知识和设施，探索外延的新概念，一种“电子生长”机制。在这种机制中，形成原子级平坦膜的临界厚度对应于二维电子系统可以被限制在真空和衬底之间的势阱中的厚度。这种神奇的薄膜厚度取决于量子阱态的性质，也就是说，原子的整体排列取决于电子占据某些量子力学状态的偏好。为该项目共同提供的特殊资源包括高分辨率光电发射、表面X射线散射、扫描探针显微镜、高分辨率非弹性电子散射和超级计算设备。拟议的研究强调通过理论和实验研究相结合的基本机制和过程的理解。该项目解决了具有高技术相关性的材料科学主题领域的前沿材料科学研究问题。 该研究将有助于在基本水平的基本材料科学知识的重要方面的金属-半导体接口的关键电子/光子器件和集成电路，一般。 此外，从研究中获得的基本知识和理解有望通过为未来的量子力学器件设计和生产改进的材料和结构提供基本理解和基础，有助于提高先进器件和电路的性能。该研究计划可能导致金属异质外延的新范式，这在电子器件和微电子电路的制造中具有重要意义。***

9705406 Plummer This FRG proposal addresses, experimentally and theoretically, basic materials science issues in a collaborative program involving researchers at four universities and ORNL, combining expertise and facilities to explore a new concept in epitaxy, an "electronic growth" mechanism. Within this mechanism the critical thickness for the formation of an atomically flat film corresponds to the thickness where the two-dimensional electronic system can be confined in a potential well between the vacuum and the substrate. This magic film thickness depends on the nature of quantum well states, that is, the overall arrangement of atoms is dictated by the preference of electrons to occupy certain quantum-mechanical states. Special resources made available jointly for this project include high resolution photo-emission, surface x-ray scattering, scanning probe microscopy, high resolution inelastic electron scattering, and super computing equipment. The proposed research emphasizes understanding of fundamental mechanisms and processes through a combination of theoretical and experimental studies. %%% The project addresses forefront materials science research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of metal-semiconductor interfaces critical to electronic/photonic devices and integrated circuitry, in general. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials and structures for the quantum mechanical devices of the future. The research program may lead to a new paradigm for metal heteroepitaxy, which is of significance in the fabrication of electronic devices and microelectronics circuitry. ***