Synthesis and Characterization of Carbon Coatings in the Surface of Carbides Produced by Etching in Halogens

在SGER奖下，PI最近展示了在高温反应器中用卤素蚀刻去除硅的方法在碳化硅表面合成碳涂层的可行性。该项目将研究该过程的基本性质，以确定碳-碳自组装的机制，作为工艺条件的函数而生长的各种结构，以及形成的热力学和生长的动力学。将确定金刚石、类金刚石、非晶碳和石墨层形成的条件。这些薄膜的一些化学、机械和摩擦学性能将被评估，以及它们作为CVD沉积碳薄膜的界面层的适用性。

Under an SGER award the PI has recently demonstrated the feasibility of synthesizing carbon coatings on silcon carbide surfaces by removing the silicon with a halogen etch in a high temperature reactor. This project will study the fundamental nature of the process to determine the mechanisms of carbon-carbon self assembly, the various structures grown as a functioon of process conditions, and the thermodynamics of formation and the kinetics of growth. The conditions for formation of diamond, diamond-like, amorphous carbon, and graphite layers will be determined. Some of the chemical, mechanical and tribological properties of the films will be evaluated as well as their suitability as interface layers for CVD deposition of carbon films.