SBIR Phase I: In-Situ Characterization of Photoresist Properties by Fourier Transform Infrared Based IR Spectroscopy

SBIR 第一阶段：通过基于傅里叶变换红外的红外光谱法对光刻胶特性进行原位表征

• 批准号: 9860798
• 负责人: Matthew Richter
• 金额: $ 9.97万
• 依托单位: On-Line Technologies Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-01-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9860798&HistoricalAwards=false
• 关键词: SBIR; Phase; Situ; Characterization; Photoresist

9860798 This Small Business Innovation Research Phase I will develop an in-line, FTIR-based sensor to monitor the chemistry of new deep ultraviolet chemically amplified resist materials used for advanced submicron photolithography in the semiconductor industry. A novel Fourier Transform InfraRed microscope integrated directly upon a commercial lithographic cluster tool will be developed that will provide rapid data on the resist chemistry between process steps. The sensor will incorporate optics and algorithms tailored to the analysis of photoresist chemistry. The proposed technology will lead to improved understanding of new, chemically amplified resists used for sub-micron lithography of semiconductor devices, which will lead to decreased process and product development times, higher yields and potentially closed-loop process control for lithographic applications.

9860798 该小型企业创新研究第一阶段将开发一种基于FTIR的在线传感器，以监测用于半导体行业先进亚微米光刻的新型深紫外化学放大抗蚀剂材料的化学性质。 一种新的傅里叶变换显微镜直接集成在一个商业光刻集群工具将开发，将提供快速的数据之间的抗蚀剂化学过程的步骤。 该传感器将整合专为光致抗蚀剂化学分析而设计的光学器件和算法。 所提出的技术将导致对用于半导体器件的亚微米光刻的新的化学放大抗蚀剂的更好的理解，这将导致减少工艺和产品开发时间，提高产量和潜在的闭环工艺控制光刻应用。