SBIR Phase I: The Study of Superior Quality Thin Films Derived from Liquid Combustion in a Thermal Plasma

SBIR 第一阶段：热等离子体中液体燃烧产生的优质薄膜的研究

• 批准号: 9861324
• 负责人: Henry Luten
• 金额: $ 10万
• 依托单位: NGIMAT CO.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-01-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9861324&HistoricalAwards=false
• 关键词: SBIR; Phase; Study; Superior; Quality

9861324 This SBIR Phase I project will investigate the fundamental physics and chemistry of the innovative combustion chemical vapor deposition (CCVD) process for thin film deposition. CCVD is an innovative, patented, atmospheric pressure, thermal plasma process that has been successfully utilized to deposit exceedingly high quality thin film materials at high rate and low cost. Accordingly, it has enormous commercial potential. The CCVD process, generally, starts with a hydrocarbon solution containing a dissolved metal complex that is pumped under pressure into a torch like nozzle. The solution is submicron atomized via a proprietary nebulizer and injected into the plasma generated by the torch causing deposition of a thin film of the desired material onto a substrate. Epitaxial films can be deposited onto single crystal and oriented substrates. The high quality of the as deposited films is due to the ability of the CCVD process to atomize and combust the precursor solutions cleanly and efficiently. In order to improve our understanding and control of the process, the fundamental dynamics of the thermal plasma, including dissociation chemistry and chemical transport will be studied by a number of physical and spectroscopic techniques including atomic emission spectroscopy and optical pyrometry. These fundamental data will be correlated with process performance for representative thin film manufacturing applications, specifically with respect to CCVD deposition rate, film quality and process economics. Deposition of high quality thin film materials for use in electronics, corrosion protection, optical coatings, nanopowders, superconductors, fuel cells as well as other applications yielding a potential multibillion dollar total market. Increased liquid combustion efficiencies relative to current technology.

9861324 该SBIR第一阶段项目将研究用于薄膜沉积的创新燃烧化学气相沉积（CCVD）工艺的基本物理和化学。CCVD是一种创新的专利大气压热等离子体工艺，已成功地用于以高速率和低成本存款极高质量的薄膜材料。 因此，它具有巨大的商业潜力。CCVD工艺通常从含有溶解的金属络合物的烃溶液开始，该烃溶液在压力下被泵送到火炬状喷嘴中。该溶液通过专用喷雾器进行亚微米雾化，并注入到由炬产生的等离子体中，从而在基材上沉积所需材料的薄膜。外延膜可以沉积在单晶和取向衬底上。沉积膜的高质量是由于CCVD工艺清洁有效地分解和燃烧前体溶液的能力。为了提高我们的理解和控制的过程中，热等离子体的基本动力学，包括离解化学和化学输运将研究的物理和光谱技术，包括原子发射光谱和光学高温。这些基本数据将与代表性薄膜制造应用的工艺性能相关，特别是CCVD沉积速率、薄膜质量和工艺经济性。 高质量薄膜材料的沉积，用于电子、防腐蚀、光学涂层、纳米粉末、超导体、燃料电池以及其他应用，产生潜在的数十亿美元的总市场。相对于现有技术，液体燃烧效率提高。