SBIR Phase I: A Novel Ultra-High Resolution Technique for the Fabrication of Nanoelectronic Device Arrays

SBIR 第一阶段：用于制造纳米电子器件阵列的新型超高分辨率技术

• 批准号: 0109745
• 负责人: Elena Guliants
• 金额: $ 9.96万
• 依托单位: Taitech, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-07-01 至 2001-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0109745&HistoricalAwards=false
• 关键词: SBIR; Phase; Novel; Ultra; Resolution

This Small Business Innovation Research (SBIR) Phase I project will develop a new approach for the fabrication of periodic nanoelectronic device arrays. Processing of structures on the sub-100nm scale poses significant challenges due to limited resolution of available lithographic methods. The proposed technique will address the deficiencies of the existing nanofabrication approaches by directly growing nanostructures inside a molecularly self-assembled NanoWell shadow mask, which offers an unprecedented atomic-scale control over the nanostructure size. During the proposed research, a silica shadow mask with cylindrical pores ~3-30 nm, or NanoWells, will be self-assembled employing organic surfactant molecules. Silicon nanorods will be grown inside NanoWells by both CVD and sputtering, followed by chemical removal of a shadow mask. An array of Si nanorod LEDs will be fabricated to demonstrate the feasibility of the proposed approach as well as the quantum size effect for the Si nanorods. If successful, this cost effective, high-throughput, and ultra-high precision technique will figure into a wide range of electronic device array applications such as sensors, processors, memories and displays, and provide enhanced miniaturization, speed, and power reduction. The proposed technique will offer the dramatically improved nanoprocessing capabilities for the fabrication of flat panel displays, sensor arrays, quantum dots, nanomagnetics, image and signal processors. It will have a broad range of potential applications in commercial microelectronics and image processing industries.

这个小型企业创新研究（SBIR）第一阶段项目将开发一种制造周期性纳米电子器件阵列的新方法。由于现有光刻方法的分辨率有限，亚 100 纳米尺度的结构加工面临着巨大的挑战。 所提出的技术将通过在分子自组装 NanoWell 荫罩内直接生长纳米结构来解决现有纳米制造方法的缺陷，这对纳米结构尺寸提供了前所未有的原子级控制。 在拟议的研究期间，将使用有机表面活性剂分子自组装具有约 3-30 nm 圆柱形孔或纳米孔的二氧化硅荫罩。硅纳米棒将通过 CVD 和溅射在纳米井内生长，然后用化学方法去除荫罩。 将制造硅纳米棒 LED 阵列，以证明所提出方法的可行性以及硅纳米棒的量子尺寸效应。如果成功，这种具有成本效益、高吞吐量和超高精度的技术将广泛应用于传感器、处理器、存储器和显示器等电子设备阵列应用，并提供增强的小型化、速度和功耗降低。 所提出的技术将为平板显示器、传感器阵列、量子点、纳米磁学、图像和信号处理器的制造提供显着改进的纳米处理能力。 它将在商业微电子和图像处理行业具有广泛的潜在应用。