SBIR Phase I: Investigation of Charge Trapping in Plasma Enhanced Chemical Vapor Deposition (PECVD) Dielectrics Using Electrostatically Actuated Mechanical Resonators

SBIR 第一阶段：使用静电驱动机械谐振器研究等离子体增强化学气相沉积 (PECVD) 电介质中的电荷捕获

• 批准号: 0211203
• 负责人: Alissa Fitzgerald
• 金额: $ 10万
• 依托单位: Siemens Medical Solutions USA, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-01 至 2002-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0211203&HistoricalAwards=false
• 关键词: SBIR; Phase; Investigation; Charge; Trapping

This Small Business Innovation Research (SBIR)Phase I project will develop a novel way to measure charge trapping in dielectrics. The feasibility of our method by applying it to the characterization of plasma enhanced chemical vapor deposition (PECVD) nitride and oxide will be demonstrated. The deposition chemistry of these materials leaves trap sites that capture charge when subjected to large electric fields. Trapped charge affects the stability and performance of micro-electro-mechanical (MEM) devices that employ these dielectrics. A novel technique that uses a resonant, electro-statically actuated mechanical structure to measure charge trapped in a suspended dielectric layer is proposed. The real part of the device impedance, measured using a network analyzer, can be correlated to changes in electric field in the dielectric resulting from trapped charge..PECVD dielectrics are critical constituents in MEM devices that enable $3.5 Billion in annualized sales (optical components, RF components, and medical imaging components). Although the technique itself is not a commercial product, it is broadly applicable to the engineering of MEMs devices utilizing suspended PECVD dielectric layers, such as radio frequency (RF) switches and micro-mirrors. This control of charge trapping in highly process sensitive PECVD dielectrics will allow us to realize the full commercial potential of our ultrasound devices in medical imaging applications.

这个小型企业创新研究 (SBIR) 第一阶段项目将开发一种测量电介质中电荷俘获的新方法。我们的方法通过应用于等离子体增强化学气相沉积（PECVD）氮化物和氧化物的表征的可行性将得到证明。 这些材料的沉积化学会在受到大电场时留下捕获电荷的陷阱位点。捕获的电荷会影响采用这些电介质的微机电 (MEM) 器件的稳定性和性能。 提出了一种新技术，该技术使用谐振静电驱动机械结构来测量悬浮介电层中捕获的电荷。 使用网络分析仪测量的器件阻抗的实数部分可以与捕获电荷引起的电介质电场变化相关联。PECVD 电介质是 MEM 器件的关键组成部分，这些器件的年销售额达 35 亿美元（光学元件、射频元件和医学成像元件）。尽管该技术本身不是商业产品，但它广泛适用于利用悬浮 PECVD 介电层的 MEM 器件的工程，例如射频 (RF) 开关和微镜。 这种对高度工艺敏感的 PECVD 电介质中电荷俘获的控制将使我们能够充分发挥超声设备在医学成像应用中的商业潜力。