PECASE: Spectral Directional Radiative Properties of Rough Si at Elevated Temperatures
PECASE: Spectral Directional Radiative Properties of Rough Si at Elevated Temperatures
批准号:
0236831
负责人:
Zhuomin Zhang
金额:
$22.6万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2002
资助国家:
美国
项目状态:
已结题
起止时间:
2002-08-08 至 2005-08-31
中文摘要
PECASE:高温下粗糙硅的光谱定向辐射特性9875441 Zhuomin Zhang这是NSF CAREER/PECASE资助的硅高温辐射特性研究。首席研究员将对抛光和粗糙表面的硅晶片的定向辐射特性进行测量,测量范围从室温到1000 ℃,从0.4到20微米。研究的理论部分将强调表面粗糙度对发射率和透射率的影响。本研究亦将探讨其基本机制,如载子散射率与温度的关系及光子增强吸收,并将利用本研究所测得的粗糙矽的辐射特性,进行详细的热传递分析,以预测晶圆至辐射计及快速热处理室的辐射及反射,进而优化快速热处理室的设计。此外,提出了一个综合的教育计划,以推进热科学工程教育,通过开发一个微型热科学计划和适当的教学和实验室手册的写作。
英文摘要
PECASE: Spectral Directional Radiative Properties of Rough Si at Elevated Temperatures9875441Zhuomin ZhangThis is an NSF CAREER/PECASE grant for research on the radiative properties of silicon at elevated temperatures. The principal investigator will conduct measurements of the directional radiative properties of Si wafers with polished and rough surfaces from room temperature up to 1000 C and from 0.4 to 20 micrometers. The theoretical part of the study will emphasize the effect of surface roughness on emittance and transmittance. The fundamental mechanisms, such as the temperature dependence of the carrier scattering rate and photon-enhanced absorption, will also be investigated.The radiative properties of rough Si determined from this project will be used in a detailed heat transfer analysis to predict the emitted and reflected radiation from the wafer to the radiometer and the rapid thermal processing (RTP) chamber to optimize the RTP chamber design. In addition, an integrated educational plan is proposed to advance thermal science engineering education through the development of a microscale thermal science program and the writing of appropriate instructional and laboratory manuals.
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依托单位:
PECASE: Spectral Directional Radiative Properties of Rough Si at Elevated Temperatures
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批准号:9875441
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项目类别:Continuing Grant
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Thermo-Optical Response of High-Temperature Superconducting Films
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