Electronic Properties of Molecules and Oxide Layers on Silicon

硅上分子和氧化层的电子特性

• 批准号: 0316223
• 负责人: Douglas Doren
• 金额: $ 39万
• 依托单位: University of Delaware
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-01 至 2007-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0316223&HistoricalAwards=false
• 关键词: Electronic; Properties; Molecules; Oxide; Layers

Doug Doren of the University of Delaware is supported by the Theoretical and Computational Chemistry Program to develop and apply theoretical tools in order to explore the electronic properties of molecules and dielectric layers on silicon surfaces. He will use quantum chemistry methods to predict structures, charge densities, energy levels, and electron transport properties. He will focus on the conductivity of organic molecules covalently attached to semiconductors, and ultrathin layers of oxide dielectric materials on silicon.The research goals are to develop the foundations for fundamentally new types of devices based on hybrid molecular/semiconductor materials and to understand the properties of dielectric/semiconductor interfaces for near-term use in microelectronics.

特拉华州大学的Doug Doren在理论和计算化学项目的支持下开发和应用理论工具，以探索硅表面分子和介电层的电子特性。 他将使用量子化学方法来预测结构，电荷密度，能级和电子传输特性。 他将专注于有机分子共价连接到半导体上的导电性，以及硅上氧化物介电材料的覆盖层。研究目标是为基于混合分子/半导体材料的新型器件奠定基础，并了解介电/半导体界面的特性，以便在短期内用于微电子学。