SBIR Phase I: Carbon Nanotubes FET Platform for Electronic & Sensors Applications

SBIR 第一阶段：电子碳纳米管 FET 平台

• 批准号: 0340484
• 负责人: Jean-Christophe Gabriel
• 金额: $ 9.99万
• 依托单位: Nanomix, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-01-01 至 2004-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0340484&HistoricalAwards=false
• 关键词: SBIR; Phase; Carbon; Nanotubes; FET

This Small Business Innovation Research Phase I project involves the fabrication of a nanoelectronic device research module or kit for use by educational institutions and private sector researchers. The nanoelectronic devices will be used as transducer components in chemical, biological and photonic sensors. The kit will have three components: 1) packaged nanotube based field effect transistors (NTFETs); 2) a functionalization test board (FTB) for testing the devices; and, 3) a data acquisition system by which the users control the FTB. The NTFET development will require refinement of the production of reproducible nanotube array devices on 4" silicon wafers. The proposed work involves extending semiconductor manufacturing to produce 1 nm objects with the attendant challenges of imaging, measurement and process control. The project will optimize the major variables important to the uniform growth of arrays of single-wall carbon nanotubes with the electronic properties necessary for sensor transduction. The work will explore FET geometries and will develop tools and software for nanotube device characterization.The commercial application of this project is a research tool for the electronics market. The impact of the proposed work lies in its potential long-term contribution to the $300 billion electronics industry. Advances in silicon electronics have been driven by reductions in the feature size on the silicon chips. To extend the reach of Moore's Law, nanotubes offer the best path. The transition from silicon electronics to molecular electronics will be facilitated by the introduction of carbon nanotubes into hybrid architectures based on silicon substrates. Commercial availability of the NTFET kit would allow many component makers to study molecular electronic interactions and develop proprietary formulations for NTFET-based sensors. In addition, the academic community will be provided with inexpensive access to a technology with a very high barrier to entry.

这个小企业创新研究第一阶段项目包括制造纳米电子设备研究模块或工具包，供教育机构和私营部门的研究人员使用。纳米电子器件将用作化学、生物和光子传感器的换能器元件。该套件将由三个部分组成：1)封装的纳米管场效应晶体管（ntfet）；2)用于测试器件的功能化测试板（FTB）；3)用户控制FTB的数据采集系统。NTFET的发展将需要在4英寸硅片上改进可重复的纳米管阵列器件的生产。提出的工作包括将半导体制造扩展到生产1nm物体，随之而来的是成像，测量和过程控制方面的挑战。该项目将优化对具有传感器转导所需电子特性的单壁碳纳米管阵列均匀生长重要的主要变量。这项工作将探索场效应管的几何形状，并将开发用于纳米管器件表征的工具和软件。该项目的商业应用是电子市场的研究工具。这项拟议工作的影响在于它对价值3000亿美元的电子工业的潜在长期贡献。硅电子学的进步是由硅芯片特征尺寸的减小所驱动的。为了扩展摩尔定律的范围，纳米管提供了最好的途径。将碳纳米管引入到基于硅衬底的混合结构中，将促进从硅电子学到分子电子学的过渡。NTFET套件的商业可用性将允许许多元件制造商研究分子电子相互作用，并开发基于NTFET的传感器的专有配方。此外，学术界将以低廉的价格获得一种进入门槛很高的技术。