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US-India Cooperative Research: Investigating Metal Induced Crystallization on Thin Films of Amorphous Silicon

US-India Cooperative Research: Investigating Metal Induced Crystallization on Thin Films of Amorphous Silicon
美印合作研究:研究非晶硅薄膜上的金属诱导结晶
批准号:
0352805
负责人:
Hameed Naseem
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-07-01 至 2009-06-30

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0352805NaseemDescription: This award supports the US-India cooperative research entitled Investigating Metal Induced Crystallization on Thin Films of Amorphous Silicon. Professors Hameed Naseem, University of Arkansas and Ram Kishore, National Physical Laboratory (NPL), New Delhi will use characterization techniques including electron microscopy to investigate low temperature, aluminum induced solid phase crystallization of amorphous silicon. They expect to improve fundamental understanding of the basic science, including kinetics, of crystallization. Scope: The collaborators will employ complimentary strengths of the University of Arkansas in thin film processing and that of NPL in electron microscopy to study in real-time nucleation and growth mechanisms associated with crystallization behavior of amorphous silicon. They expect to develop new technologies that will reduce the amount of energy and material needed for a given end product and expand choices of low cost materials. They may be applications for lower cost photovoltaic and thermo-photovoltaic power generation options in large area liquid crystal flat panel displays and high-density TV application. Findings will be disseminated at international conferences and in scientific journals. This research is supported by the Department of Science & Technology (DST) under the NSF/DST joint program.
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