CAD Tools for Double-Gate FETS

【摘要】SohaTufts大学hassoun， SohaTufts) CMOS技术的规模化已经在晶体管密度和性能上带来了天文数字的提升，从而在更高的速度下实现了更多的芯片功能。几个问题预计会困扰纳米设计：对工艺和操作变化的稳健性；由于电迁移和软误差导致的长期可靠性；功率密度，静态功率密度接近或超过动态功率密度。需要跨越材料、器件、电路、微架构和计算机辅助设计（CAD）工具的新颖解决方案来克服这些问题。在本提案中，我们专注于双栅器件的CAD工具，这是一种具有多个栅极终端的新型晶体管结构，用于控制晶体管通道。与mosfet相比，双栅器件有望在提供高驱动电流的同时大幅改善对泄漏电流和短通道效应的控制。

ABSTRACT0429921Hassoun, SohaTufts UniversityThe scaling of CMOS technologies has delivered astronomical increases in transistor density and performance,leading to more chip functionality at higher speeds. Several problems are expected to plague nanometer designs:robustness to process and operating variations; long-term reliability due to electromigration and soft errors; and power density, with static power density approaching or exceeding the dynamic one. Novel solutions spanning materials, devices, circuits, microarchitectures and Computer-Aided Design (CAD) tools are required to overcome these problems.We focus in this proposal on CAD tools for double-gate devices, novel transistor structures with more than one gate terminal to control the transistor channel. Compared to MOSFETs, double-gate devices promise substantial improved control over leakage current and short channel effects while delivering high drive currents.