CAD Tools for Double-Gate FETS

索哈塔夫茨大学Hassoun，SohaTuft University技术的扩展带来了晶体管密度和性能的天文数字增长，导致以更高的速度提供更多的芯片功能。预计将有几个问题困扰纳米设计：对工艺和操作变化的健壮性；由于电迁移和软错误而产生的长期可靠性；以及功率密度，静态功率密度接近或超过动态功率密度。为了克服这些问题，需要跨越材料、器件、电路、微体系结构和计算机辅助设计(CAD)工具的新型解决方案。在本提案中，我们重点介绍用于双栅器件的CAD工具，即具有多个栅极端来控制晶体管沟道的新型晶体管结构。与MOSFET相比，双栅极器件在提供高驱动电流的同时，承诺大幅改善对泄漏电流和短沟道效应的控制。

ABSTRACT0429921Hassoun, SohaTufts UniversityThe scaling of CMOS technologies has delivered astronomical increases in transistor density and performance,leading to more chip functionality at higher speeds. Several problems are expected to plague nanometer designs:robustness to process and operating variations; long-term reliability due to electromigration and soft errors; and power density, with static power density approaching or exceeding the dynamic one. Novel solutions spanning materials, devices, circuits, microarchitectures and Computer-Aided Design (CAD) tools are required to overcome these problems.We focus in this proposal on CAD tools for double-gate devices, novel transistor structures with more than one gate terminal to control the transistor channel. Compared to MOSFETs, double-gate devices promise substantial improved control over leakage current and short channel effects while delivering high drive currents.