CAD Tools for Double-Gate FETS

双栅极 FETS 的 CAD 工具

• 批准号: 0429921
• 负责人: Soha Hassoun
• 金额: --
• 依托单位: Tufts University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-09-01 至 2008-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0429921&HistoricalAwards=false
• 关键词: CAD; Tools; Double; Gate; FETS

ABSTRACT0429921Hassoun, SohaTufts UniversityThe scaling of CMOS technologies has delivered astronomical increases in transistor density and performance,leading to more chip functionality at higher speeds. Several problems are expected to plague nanometer designs:robustness to process and operating variations; long-term reliability due to electromigration and soft errors; and power density, with static power density approaching or exceeding the dynamic one. Novel solutions spanning materials, devices, circuits, microarchitectures and Computer-Aided Design (CAD) tools are required to overcome these problems.We focus in this proposal on CAD tools for double-gate devices, novel transistor structures with more than one gate terminal to control the transistor channel. Compared to MOSFETs, double-gate devices promise substantial improved control over leakage current and short channel effects while delivering high drive currents.

索哈塔夫茨大学Hassoun，SohaTuft University技术的扩展带来了晶体管密度和性能的天文数字增长，导致以更高的速度提供更多的芯片功能。预计将有几个问题困扰纳米设计：对工艺和操作变化的健壮性；由于电迁移和软错误而产生的长期可靠性；以及功率密度，静态功率密度接近或超过动态功率密度。为了克服这些问题，需要跨越材料、器件、电路、微体系结构和计算机辅助设计(CAD)工具的新型解决方案。在本提案中，我们重点介绍用于双栅器件的CAD工具，即具有多个栅极端来控制晶体管沟道的新型晶体管结构。与MOSFET相比，双栅极器件在提供高驱动电流的同时，承诺大幅改善对泄漏电流和短沟道效应的控制。