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Pan- American Advanced Studies Institute (PASI) Ion Nanobeams, Focused Ion Beams for the Nano Era; Buenos Aires, Argentina, February 2006

Pan- American Advanced Studies Institute (PASI) Ion Nanobeams, Focused Ion Beams for the Nano Era; Buenos Aires, Argentina, February 2006
泛美高级研究所 (PASI) 离子纳米束,纳米时代的聚焦离子束;
批准号:
0519026
负责人:
Gabriel Braunstein
金额:
$10.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2005
资助国家:
美国
项目状态:
已结题
起止时间:
2005-09-01 至 2007-08-31

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英文摘要
0519026BraunsteinThis Pan-American Advanced Studies Institutes (PASI) award, jointly supported by the NSF and Department of Energy (DOE), will take place in Buenos Aires, Argentina, in February 2006 on the topic of ion nanobeams, focused ion beams for the nano era. Organized by Dr. Gabriel Braunstein of University of Central Florida, the institute will involve approximately 50 participants from the United States and Latin America including graduate students and junior and established investigators, and about 10 instructors (internationally recognized scientists, active in the field). The activities will consist of a combination of tutorial lectures, advanced-topic presentations, round table discussions, and poster sessions, with the goal of providing the participants with an up-to-date review of the basic theoretical principles of ion-solid interactions, an introduction to ion optics, knowledge of the latest developments and applications of ion beams at the micron scale and below, and familiarity with available commercial equipment and state of the art research systems for reduced dimensionality applications. The wide range of applications, materials, and beam energies, will impart a significant interdisciplinary nature to the Institute, and should foster the cross-fertilization of new ideas to advance the field and, ultimately, increase relations between Latin American junior and senior investigators and their counterparts in the U.S. Materials presented at the Institute will be posted in a designated web site for further dissemination to the scientific community and the public at large.
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Control of Defect Interactions for P-Type Doping of ZnO by Ion Implantation
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