SGER: Index Switchable III-nitride Planar Lightwave Circuits for Optical Communications

SGER：用于光通信的折射率可切换 III 氮化物平面光波电路

• 批准号: 0532610
• 负责人: Victor Frost
• 金额: --
• 依托单位: University of Kansas Center for Research Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-08-15 至 2007-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0532610&HistoricalAwards=false
• 关键词: SGER; Index; Switchable; III; nitride

0532610HuiOver the last decade, III-nitride materials have occupied the central stage in thesemiconductor research with a predominant focus on applications as photonic devicesoperating in the visible and UV regions. The PI systematically investigated the properties of IIInitrides operating in the near infrared wavelength region, including refractive indices, opticallosses, birefringence and temperature sensitivities. He has developed various photonicdevices based on AlGaN/GaN planar lightwave circuits, such as waveguide couplers andarray waveguide gratings (AWG) operating in 1550nm wavelength.Since III-nitrides are semiconductor materials, carrier injection can be used to modulate therefractive index and to change the phase delay of the waveguide. Adding an electrode oneach interference arm of an AWG made by AlGaN/GaN p-i-n heterojunction, for example,could make a wavelength demultiplexer switchable at high speed. Obviously, carrier-inducedindex change is a key step toward a real functional device for high-speed all-optical packetswitch. He proposes to design, develop and optimize AlGaN/GaN-based p-i-n heterojunctionstructure in planar lightwave circuits to realize carrier injection and index tuning. Thetheoretical work will be focused on the p-i-n heterojunction structural design and theefficiency of carrier-induced index change, including bandfilling, bandgap-shrinkage andfree-carrier absorption. The experimental work will concentrate on the fabrication,characterization and optimization of the AlGaN/GaN-based p-i-n heterojunction waveguidedevices.The intellectual merit of this proposal lies in the introduction of a new material group forapplications in optical communications. Fast tuning of refractive index by carrier injection isthe key to realize high-speed optical switch.The broader impact of this proposal is two-fold. From the application point of view, theresult of this research will enable a wide array of applications, which will have enormousimpact in optical communications. From the material science point of view, a much greaterand fundamental understanding will be gained for III-nitride semiconductors in terms of theiroptical and physical properties.The unique properties of III-nitrides make them attractive for guiding and switch of light inthe infrared wavelength region for optical communications, which may allow the creation ofphotonic devices with unprecedented properties and functionalities.

在过去的十年中，III族氮化物材料已经占据了半导体研究的中心阶段，主要集中在可见光和紫外光区域的光子器件应用上。PI系统地研究了III族氮化物在近红外波长区域的性能，包括折射率，光学损耗，双折射和温度灵敏度。基于AlGaN/GaN平面光波导电路，他研制了各种光子器件，如工作在1550 nm波长的波导耦合器和阵列波导光栅（AWG）。例如，在由AlGaN/GaN p-i-n异质结制成的AWG的每个干涉臂上添加电极可以使波长解复用器高速切换。显然，载波诱导折射率变化是实现高速全光分组交换真实的功能器件的关键一步。他建议在平面光波导电路中设计、开发和优化AlGaN/GaN基p-i-n异质结结构，以实现载流子注入和折射率调谐。理论工作将集中在p-i-n异质结的结构设计和载流子诱导折射率变化的效率，包括能带填充，带隙收缩和自由载流子吸收。实验工作将集中在AlGaN/GaN基p-i-n异质结波导器件的制备、表征和优化上，这一方案的智力价值在于引入了一种新的光通信材料。通过载流子注入实现折射率的快速调谐是实现高速光开关的关键，这一方案的广泛影响是双重的。从应用的角度来看，本研究的结果将使其具有广泛的应用，这将在光通信中产生巨大的影响。从材料科学的角度来看，人们对III族氮化物半导体的光学和物理性质有了更深入的了解，III族氮化物的独特性质使其在红外波段光的引导和开关方面具有很大的吸引力，这将有助于制造具有前所未有的性能和功能的光子器件。