SGER: Index Switchable III-nitride Planar Lightwave Circuits for Optical Communications

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0532610HuiOver the last decade, III-nitride materials have occupied the central stage in thesemiconductor research with a predominant focus on applications as photonic devicesoperating in the visible and UV regions. The PI systematically investigated the properties of IIInitrides operating in the near infrared wavelength region, including refractive indices, opticallosses, birefringence and temperature sensitivities. He has developed various photonicdevices based on AlGaN/GaN planar lightwave circuits, such as waveguide couplers andarray waveguide gratings (AWG) operating in 1550nm wavelength.Since III-nitrides are semiconductor materials, carrier injection can be used to modulate therefractive index and to change the phase delay of the waveguide. Adding an electrode oneach interference arm of an AWG made by AlGaN/GaN p-i-n heterojunction, for example,could make a wavelength demultiplexer switchable at high speed. Obviously, carrier-inducedindex change is a key step toward a real functional device for high-speed all-optical packetswitch. He proposes to design, develop and optimize AlGaN/GaN-based p-i-n heterojunctionstructure in planar lightwave circuits to realize carrier injection and index tuning. Thetheoretical work will be focused on the p-i-n heterojunction structural design and theefficiency of carrier-induced index change, including bandfilling, bandgap-shrinkage andfree-carrier absorption. The experimental work will concentrate on the fabrication,characterization and optimization of the AlGaN/GaN-based p-i-n heterojunction waveguidedevices.The intellectual merit of this proposal lies in the introduction of a new material group forapplications in optical communications. Fast tuning of refractive index by carrier injection isthe key to realize high-speed optical switch.The broader impact of this proposal is two-fold. From the application point of view, theresult of this research will enable a wide array of applications, which will have enormousimpact in optical communications. From the material science point of view, a much greaterand fundamental understanding will be gained for III-nitride semiconductors in terms of theiroptical and physical properties.The unique properties of III-nitrides make them attractive for guiding and switch of light inthe infrared wavelength region for optical communications, which may allow the creation ofphotonic devices with unprecedented properties and functionalities.