SBIR Phase I: Novel Heterojunction Bipolar Transistor Design for InP-Based Integrated Circuits

这个小型企业创新研究第一阶段项目将满足对可靠、低成本无线元件和超高速InP集成电路的需求。根据这一计划，将设计和制造一种新型的异质结双极晶体管，以实现用于无线通信的高产量、低成本的InP集成电路生产。通过开发基于InP的异质结双极晶体管的新加工技术，在生产亚微米器件尺寸的同时利用传统的光刻技术，将降低成本。更小的设备尺寸也将产生更高效的电路，从而在移动电子应用中提供更长的电池寿命。这些技术将提高器件成品率和可靠性，并增加制造产能。InP集成电路生产需要更高的成品率、更大的集成规模、更高的可靠性和更低的成本，以使其能够有效地与SiGe竞争。利用InP异质结双极晶体管生产复杂(50,000个晶体管)集成电路将成为现实。通过使用上一代光刻技术加工异质结双极晶体管集成电路，将减少开发时间和成本，使产品能够更快地进入市场。

This Small Business Innovative Research Phase I project will address the need for reliable, low cost wireless components and ultra high speed InP integrated circuits. Under this program a novel hetero-junction bipolar transistor will be designed and fabricated that will enable high-yield, low cost InP integrated circuit production for wireless communications. Cost will be reduced by developing new processing techniques for InP-based hetero-junction bipolar transistors that utilize conventional lithographic technology while producing submicron device dimensions. Smaller device dimensions will also produce more efficient circuits, allowing for longer battery life in mobile electronics applications. These techniques will improve device yield and reliability and increase manufacturing throughput. Higher yields, larger scale of integration, improved reliability and lower cost are needed in InP integrated circuit production to allow it to compete effectively with SiGe. Production of complex ( 50,000 transistors) integrated circuits utilizing InP hetero-junction bipolar transistors will become a practical reality. By using previous generation lithographic techniques for processing of heterojunction bipolar transistors integrated circuits, development time and costs will be reduced, allowing products to reach the market faster.