SBIR Phase I: Novel Heterojunction Bipolar Transistor Design for InP-Based Integrated Circuits

SBIR 第一阶段：用于 InP 集成电路的新型异质结双极晶体管设计

• 批准号: 0539367
• 负责人: Nathaniel Crain
• 金额: --
• 依托单位: VEGA WAVE SYSTEMS, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2006-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0539367&HistoricalAwards=false
• 关键词: SBIR; Phase; Novel; Heterojunction; Bipolar

This Small Business Innovative Research Phase I project will address the need for reliable, low cost wireless components and ultra high speed InP integrated circuits. Under this program a novel hetero-junction bipolar transistor will be designed and fabricated that will enable high-yield, low cost InP integrated circuit production for wireless communications. Cost will be reduced by developing new processing techniques for InP-based hetero-junction bipolar transistors that utilize conventional lithographic technology while producing submicron device dimensions. Smaller device dimensions will also produce more efficient circuits, allowing for longer battery life in mobile electronics applications. These techniques will improve device yield and reliability and increase manufacturing throughput. Higher yields, larger scale of integration, improved reliability and lower cost are needed in InP integrated circuit production to allow it to compete effectively with SiGe. Production of complex ( 50,000 transistors) integrated circuits utilizing InP hetero-junction bipolar transistors will become a practical reality. By using previous generation lithographic techniques for processing of heterojunction bipolar transistors integrated circuits, development time and costs will be reduced, allowing products to reach the market faster.

该小型企业创新研究第一阶段项目将满足对可靠、低成本无线元件和超高速InP集成电路的需求。根据这项计划，一种新型的异质结双极晶体管将被设计和制造，这将使高产量，低成本的InP集成电路生产的无线通信。成本将降低开发新的处理技术的InP基异质结双极晶体管，利用传统的光刻技术，同时生产亚微米器件尺寸。更小的器件尺寸也将产生更高效的电路，从而在移动的电子应用中实现更长的电池寿命。这些技术将提高器件的良率和可靠性，并增加制造产量。InP集成电路生产需要更高的成品率、更大的集成规模、更高的可靠性和更低的成本，以使其能够有效地与SiGe竞争。利用InP异质结双极晶体管生产复杂的（50，000个晶体管）集成电路将成为现实。通过使用上一代光刻技术来处理异质结双极晶体管集成电路，将减少开发时间和成本，使产品更快地进入市场。