SBIR Phase I: Enhanced P-Type Doping of ZnO by Band Gap Engineering

这个小型企业创新研究第一阶段项目致力于使用新的氧化锌p型掺杂方法开发固态紫外光/蓝光发光二极管(LED)。提出的概念提供了解决目前的p型掺杂问题，这是所有氧化锌LED发展的主要障碍。氧化锌具有明显的优势，它的激子结合能是GaN的三倍，这可能会导致更高效的发光。通过与其他元素的合金化，氧化锌基LED可以发出从紫外线到可见光的光。该项目将致力于p型掺杂和外延生长的优化，最终实现全氧化锌发光二极管。这项工作的成果将有利于和促进激光二极管、调制器和探测器等其他紫外光器件的发展。如果成功，该项目的成果将在民用和军用市场得到广泛应用。这些应用包括普通房间照明、交通灯、室外显示器、汽车应用和超高密度光存储系统。建议的器件将实现独特的高功率和高温操作。这一发展将为实现基于p-n结的发光体提供使能技术。性能改进的新型发射器将扩大SVTA的光学产品组合。

This Small Business Innovation Research Phase I project addresses the development of solid state ultraviolet/blue light emitting diode (LED) using novel approaches for ptype doping of ZnO. The proposed concepts offer a solution to current p-type doping problem, which is the main obstacle in the development of all ZnO LED. ZnO has the distinct advantage of having three times the exciton binding energy than that of GaN, leading to potentially much more efficient light emitters. By alloying with other elements, ZnO-based LED can emit light from ultraviolet to the visible. The proposed project will focus on p-type doping and epitaxy growth optimization leading to the realization of all ZnO LED. Understanding gained from the proposed work will benefit and spur the development of other UV devices such as laser diodes, modulators and detectors.If successful the outcome of this project will find widespread applications in civilian and military markets. The applications include general room lighting, traffic lights, outdoor displays, automotive application, and ultrahigh density optical storage systems. The proposed devices will enable unique high power and high temperature operation. This development would provide enabling technology for achieving light emitters based on p-n junctions. Novel emitters with improved performance will expand SVTA's optical product portfolio.