SBIR Phase I: Chemical Vapor Deposition Tool for Device Grade SiC Epilayers

这个小企业创新研究（SBIR）第一阶段项目将产生一个高通量，大面积，化学气相沉积（CVD）工具，用于生产器件级SiC外延薄膜和衬底。该提案将开发、测试和实施该技术。碳化硅（SiC）是一种宽带隙材料，是继硅和砷化镓之后下一代高功率、高频和辐射硬器件应用的关键推动者。由于其独特的材料和电子特性，与Si和GaAs产品相比，SiC器件可以在更高的额定功率以及更高的频率和温度下工作。出于这个原因，这些高性能设备在商业和军事设备应用中都受到强烈追捧。然而，到目前为止，由于缺乏大面积、器件级外延薄膜和衬底的生产能力，其商业潜力受到限制。提出的工作将通过增强加工能力来解决当前SiC外延工艺技术的材料限制。碳化硅独特的材料特性使该材料可用于高性能器件，用于需要高功率、高频或高温的应用。例如，这种设备正在开发用于照明、消费电子、工业电子和汽车工业。SiC器件还将用于需要高压的工业电机和电源。除了性能优势外，SiC还通过消除全球工厂常见的一系列工业设备所需的昂贵冷却系统，提供了显着的成本节约机会。然而，由于缺乏廉价、高质量的SiC衬底材料，其发展一直受到阻碍。

This Small Business Innovation Research (SBIR) Phase I project will result in a high throughput, large area, Chemical Vapor Deposition (CVD) tool for the production of device grade SiC epitaxial films and substrates. This proposal will develop, test and implement the technology. Silicon carbide (SiC) is a wide band gap material that is the proven key enabler of the next-generation high power, high-frequency and radiation hard device applications succeeding silicon and gallium arsenide. Due to its unique materials and electronic properties, SiC devices can function under higher power ratings as well as higher frequency and temperatures compared to Si and GaAs products. For that reason, these high performance devices are intensely sought after for both commercial and military device applications. To date, however, its commercial potential has been limited by a lack of production capacity for large area, device grade epitaxial films and substrates. The proposed work will address the current materials limitations of SiC epitaxial process technology through enhanced processing capabilities.The unique materials properties of Silicon Carbide allow the material to be used in high performance devices for applications that require high power, high frequency or high temperature. Such devices are under development for lighting, consumer electronics, industrial electronics and the automotive industry for example. SiC devices will also find use in industrial motors and power supplies requiring high voltage. In addition toperformance benefits, SiC offers significant cost saving opportunities by eliminating expensive cooling systems needed in a range of industrial equipment common to factories worldwide. However, development has been hampered by a lack of inexpensive, high quality SiC substrate material.