STTR Phase I: Advanced Si-Ge-Sn-based Photonic Materials and Devices

STTR 第一阶段：先进的 Si-Ge-Sn 基光子材料和器件

• 批准号: 0638253
• 负责人: John Tolle
• 金额: $ 15万
• 依托单位: Silicon Photonics Group
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-01-01 至 2007-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0638253&HistoricalAwards=false
• 关键词: STTR; Phase; Advanced; Si; Ge

This Small Business Technology Transfer (STTR) Phase I research project aims to demonstrate prototype infrared light detectors and photovoltaic (solar cell) devices based on technology developed at Arizona State University. The new technology to be explored consists in growing optical-quality alloys of tin and germanium (Ge1-ySny) directly on silicon wafers. These alloys act as infrared materials, and they can also be used as templates for the subsequent growth of other semiconductors on silicon. Of particularinterest for this project is the ternary alloy Ge1-x-ySixSny, grown for the first time at Arizona State University. Using this technology, it should be possible to build infrared detectors covering a spectral range previously inaccessible to silicon-based detectors, and to build multijunction photovoltaic devices for a more efficient capture of solar photons. The fabrication of semiconductor devices on cheap silicon wafers is of great significance because of the potentially enormous cost reductions and the possibility of integrating optoelectronic and microelectronic functions, which further reduces costs and contributes to system miniaturization. The infrared detectors proposed here cover the so-called telecom C-,L-, and U-bands within the wavelength window around 1500 nm, a region of great interest to the telecommunications industry. In the photovoltaics arena, the proposed devices have the potential to offer increased efficiencies to make crystalline silicon-based devices competitive with amorphous silicon solutions.

这个小企业技术转让（STTR）第一阶段研究项目旨在展示基于亚利桑那州立大学开发的技术的原型红外光探测器和光伏（太阳能电池）设备。即将探索的新技术包括直接在硅晶片上生长光学质量的锡和锗合金（Ge 1-ySny）。这些合金充当红外材料，它们也可以用作随后在硅上生长其他半导体的模板。该项目特别感兴趣的是三元合金Ge 1-x-ySixSny，首次在亚利桑那州州立大学生长。利用这项技术，应该可以建造覆盖以前硅基探测器无法达到的光谱范围的红外探测器，并建造多结光伏器件，以更有效地捕获太阳光子。在廉价的硅晶片上制造半导体器件具有重要意义，这是因为潜在的巨大成本降低以及集成光电和微电子功能的可能性，这进一步降低了成本并有助于系统小型化。这里提出的红外探测器覆盖了1500 nm左右波长窗口内的所谓电信C-、L-和U-波段，这是电信行业非常感兴趣的区域。在光致发光竞技场中，所提出的器件具有提供增加的效率以使基于晶体硅的器件与非晶硅解决方案竞争的潜力。