SBIR Phase I: High-Efficiency, Monolithic White LEDs Based on InN Quantum Dot Layers

SBIR 第一阶段：基于 InN 量子点层的高效单片白光 LED

• 批准号: 0712279
• 负责人: Roger Welser
• 金额: $ 9.96万
• 依托单位: Kopin Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-07-01 至 2007-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0712279&HistoricalAwards=false
• 关键词: SBIR; Phase; Efficiency; Monolithic; White

Project Summary: The goal of this Small Business Innovative Research Phase I project is to develop an efficient, monolithic white light emitting diode utilizing a multilayered InN-based quantum dot device structure. An unprecedented range of photon energies can be emitted by embedding InN-based quantum dots within a wide band gap nitride barrier. This approach also avoids fundamental problems associated with the growth of thermodynamically unstable InGaN alloy compositions. While the synthesis of high quality InN has proven challenging via standard growth techniques such as metalorganic chemical vapor deposition (MOCVD), our preliminary investigations have confirmed that InN nucleates via the strain-induced Stranski-Krastanovgrowth mode with visible emission. A key objective of this Phase I project is to demonstrate self-assembled InN quantum dot structures with strong red emission that can be combined with layers emitting at shorter wavelengths to achieve white coloring in a single p-n junction device. This SBIR project to develop InN-based quantum dots is part of a larger effort at Kopin to harness nanosemiconductors for efficient solid-state light and power generation. Three-dimensional carrier confinement in quantum dots is predicted to significantly enhance the performance of traditional semiconductor devices. The material properties of InN-based quantum dots give unparalleled flexibility in designing advanced, high-performance devices.Efficient white light emission for solid-state lighting can be obtained by engineering selfassembled quantum dot structures with dots tailored to emit at red, green, and blue wavelengths. All told, an effective InN-based quantum dot manufacturing process could impact multiple markets with billions of dollars in yearly revenue.

项目概要：这个小企业创新研究第一阶段项目的目标是开发一种高效的，单片白色发光二极管利用多层InN基量子点器件结构。通过将InN基量子点嵌入宽带隙氮化物势垒内，可以发射前所未有的光子能量范围。该方法还避免了与结晶不稳定的InGaN合金组合物的生长相关的基本问题。虽然高品质InN的合成已被证明具有挑战性，通过标准的生长技术，如金属有机化学气相沉积（MOCVD），我们的初步研究已经证实，InN成核通过应变诱导的Stranski-Krastanov生长模式与可见光发射。这个第一阶段项目的一个关键目标是展示具有强红色发射的自组装InN量子点结构，该结构可以与在较短波长下发射的层相结合，以在单个p-n结器件中实现白色着色。SBIR开发InN基量子点的项目是Kopin利用纳米半导体进行高效固态光和发电的更大努力的一部分。量子点中的三维载流子限制被预测将显著提高传统半导体器件的性能。InN基量子点的材料特性为设计先进的高性能器件提供了无与伦比的灵活性。通过设计自组装量子点结构，可以获得用于固态照明的高效白色光发射，其中量子点可在红色、绿色和蓝色波长下发射。 总而言之，一种有效的基于InN的量子点制造工艺可能会影响多个市场，年收入达数十亿美元。