SBIR Phase I: High-Efficiency, Monolithic White LEDs Based on InN Quantum Dot Layers

项目概述：这个小企业创新研究第一阶段项目的目标是利用多层基于量子点的量子点器件结构开发一种高效的单片白光发光二极管。在宽禁带氮化势垒内嵌入铟基量子点，可以发射出前所未有的光子能量范围。这种方法也避免了与热力学不稳定的InGaN合金成分生长相关的基本问题。虽然通过金属有机化学气相沉积（MOCVD）等标准生长技术合成高质量的InN具有挑战性，但我们的初步研究已经证实，InN通过应变诱导的stranski - krstanov生长模式成核，具有可见发射。这个第一阶段项目的一个关键目标是展示具有强红色发射的自组装InN量子点结构，可以与波长较短的层相结合，在单个p-n结器件中实现白色着色。这个SBIR项目旨在开发基于量子点的量子点，这是Kopin利用纳米半导体实现高效固态光和发电的更大努力的一部分。量子点中的三维载流子约束有望显著提高传统半导体器件的性能。基于量子点的材料特性为设计先进的高性能器件提供了无与伦比的灵活性。固体照明的高效白光发射可以通过工程自组装量子点结构来获得，这些量子点可以在红、绿、蓝波长下发射。总而言之，一个有效的基于量子点的量子点制造工艺可以影响多个市场，每年带来数十亿美元的收入。

Project Summary: The goal of this Small Business Innovative Research Phase I project is to develop an efficient, monolithic white light emitting diode utilizing a multilayered InN-based quantum dot device structure. An unprecedented range of photon energies can be emitted by embedding InN-based quantum dots within a wide band gap nitride barrier. This approach also avoids fundamental problems associated with the growth of thermodynamically unstable InGaN alloy compositions. While the synthesis of high quality InN has proven challenging via standard growth techniques such as metalorganic chemical vapor deposition (MOCVD), our preliminary investigations have confirmed that InN nucleates via the strain-induced Stranski-Krastanovgrowth mode with visible emission. A key objective of this Phase I project is to demonstrate self-assembled InN quantum dot structures with strong red emission that can be combined with layers emitting at shorter wavelengths to achieve white coloring in a single p-n junction device. This SBIR project to develop InN-based quantum dots is part of a larger effort at Kopin to harness nanosemiconductors for efficient solid-state light and power generation. Three-dimensional carrier confinement in quantum dots is predicted to significantly enhance the performance of traditional semiconductor devices. The material properties of InN-based quantum dots give unparalleled flexibility in designing advanced, high-performance devices.Efficient white light emission for solid-state lighting can be obtained by engineering selfassembled quantum dot structures with dots tailored to emit at red, green, and blue wavelengths. All told, an effective InN-based quantum dot manufacturing process could impact multiple markets with billions of dollars in yearly revenue.