Spintronic Devices Enabled by Semiconducting Boron Carbide
Spintronic Devices Enabled by Semiconducting Boron Carbide
批准号:
0725881
负责人:
Brian Robertson
金额:
$30.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-08-15 至 2011-07-31
中文摘要
本研究的目的是研究新型的自旋隧道结和自旋晶体管器件,使高电阻率的硼碳化物(B-C)半导体。该方法是使用半导体B-C的独特性质(带隙可调性,铁磁体的高界面自旋态密度,以及小的自旋轨道耦合)作为自旋器件中的势垒材料,并进行自旋分辨光电发射,近原子尺度表征,输运测量和器件建模。该研究的目的是研究新型非氧化物阻挡层,即使在接近环境温度的情况下也能实现有效的自旋注入和检测,以及要求较低、高度稳健、可扩展的自旋电子和超快器件制造。智力优势:智力优势在于能够关联界面电子状态,结构和输运行为,从而理解和优化拟议的和未来的磁性隧道结器件的性能。这将提供洞察力,以其他自旋电子学的方法,清楚地描绘了上述参数的作用,有助于自旋输运性质。更广泛的影响:这项研究将刺激对非氧化物势垒的研究,并为使用非磁性半导体的高效自旋注入器件开辟道路。该研究小组将增加研究生的研究参与,从代表性不足的群体(特别是妇女),培训研究生在复杂的实验和建模技术,并为他们提供国家网络的机会,不提供区域。对于外展,特别是内布拉斯加州的农村地区,将开发基于半导体BC的实践科学和技术学习模块,作为教师的课堂资源模型,并将与NSF/UNL宇宙射线天文台计划的计划增长相结合。
英文摘要
The objective of this research is to investigate new spin tunnel junction and spin transistor devices enabled by high-resistivity boron-carbide (B-C) semiconductors. The approach is to use the unique properties of semiconducting B-C (bandgap tunability, high interfacial spin density of states with ferromagnets, and small spin-orbit coupling) as a barrier material in spin devices) and to conduct spin-resolved photoemission, near-atomic-scale characterization, transport measurements, and device modeling. The research aims are to study novel non-oxide barrier layers which will enable efficient spin injection and detection even near ambient temperatures as well as less-demanding, highly-robust, scalable fabrication of spintronic and ultrafast devices. Intellectual Merit:The intellectual merit lies in the ability to correlate the interface electronic states, structure, and transport behavior and so to understand and optimize properties of the proposed, and future, magnetic tunnel junction devices. This will offer insight to other spintronics approaches by clearly delineating the role that the above parameters play in contributing to spin transport properties. Broader Impact:The research will spur investigation of non-oxide barriers and open a path to efficient spin-injection devices using non-magnetic semiconductors. The research team will increase graduate student research participation from under-represented groups (particularly women), train graduate students in sophisticated experimental and modeling techniques, and provide them with national networking opportunities not available regionally. For outreach, especially to rural Nebraska, hands-on science and technology learning modules based on semiconducting BC will be developed as model in-class resources for teachers and will be integrated with planned growth of the NSF/UNL Cosmic Ray Observatory Program.
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会议论文
Development of a Novel Inorganic Dielectric Barrier Layer for Magneto-Resistive Junctions
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批准号:0300018
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Brian Robertson
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依托单位:
Development of Spin Polarized Electron Scattering Facilities
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批准号:9977812
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项目类别:Standard Grant
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资助金额:$37.59万
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财政年份:1999
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负责人:Brian Robertson
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依托单位:
国内基金
海外基金
兼捕减少装置(Bycatch Reduction Devices, BRD)对拖网网囊系统水动力及渔获性能的调控机制
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批准号:32373187
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项目类别:面上项目
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资助金额:50万元
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批准年份:2023
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负责人:唐浩
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依托单位: