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STTR Phase II: Germyl Silanes - Enabling Precursors for Chemical Vapor Deposition of Advanced CMOS Substrates, CMOS-Integrated MEMS, and Nano-Scale Quantum-Dot Silicon Phot

STTR Phase II: Germyl Silanes - Enabling Precursors for Chemical Vapor Deposition of Advanced CMOS Substrates, CMOS-Integrated MEMS, and Nano-Scale Quantum-Dot Silicon Phot
STTR 第二阶段:Germyl 硅烷 - 为先进 CMOS 基板、CMOS 集成 MEMS 和纳米级量子点硅光子的化学气相沉积提供前驱体
批准号:
0750479
负责人:
Cole Ritter
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-04-01 至 2011-03-31

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英文摘要
This Small Business Technology Transfer Phase II project will demonstrate pilot scale manufacture of germyl silane precursors and their use to create prototype semiconductor devices and thin films under low temperature and selective growth processing conditions. The project addresses a critical need for precursors and processes that deposit such films under low temperature conditions with throughput rates that are significantly higher than those offered by existing processes. The potential market for devices made with these technologies is predicted to exceed several billion dollars per year and exhibit double-digit growth rates over the next five years. Ge-rich SiGe films will enable higher clock speeds in microprocessors, lower power consumption in cell phones, silicon-based photonics, and more efficient solar cells.
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