SBIR Phase I: Ion implantation-free SiC device fabrication technology based on low-temperature selective epitaxial growth

SBIR第一期：基于低温选择性外延生长的免离子注入SiC器件制造技术

• 批准号: 0839748
• 负责人: Galyna Melnychuk
• 金额: $ 10万
• 依托单位: BarSiC Semiconductors, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-01-01 至 2009-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0839748&HistoricalAwards=false
• 关键词: SBIR; Phase; Ion; implantation; free

This Small Business Innovative Research Phase I project aims at developing new semiconductor device processing technology for SiC electronics. The new method is based on low-temperature selective epitaxial growth of SiC (LTSEG) of SiC. The technology promises high values of doping, especially for p-type doping that is problematic in SiC. Another advantage is the development of a self-aligned fabrication technique for the emerging market of SiC power integrated circuits.Self-aligned device fabrication for SiC is in the embryonic stage. Efforts to develop new fabrication technologies in Japan and Europe are growing, which may put the U.S. SiC industry significantly behind in developing cost-efficient SiC electronics. In this respect, the novel device fabrication method offers a possibility of strong competitive advantage.

该小型企业创新研究第一阶段项目旨在为SiC电子产品开发新的半导体器件加工技术。 新方法是基于SiC的低温选择性外延生长（LTSEG）。该技术承诺高掺杂值，特别是对于SiC中存在问题的p型掺杂。另一个优势是为SiC功率集成电路的新兴市场开发了自对准制造技术。日本和欧洲正在努力开发新的制造技术，这可能会使美国SiC行业在开发具有成本效益的SiC电子产品方面大大落后。在这方面，新的器件制造方法提供了强大的竞争优势的可能性。