课题基金 / 基金详情

SBIR Phase I: Model-Based Control of Millisecond Flash Annealing of Semiconductor Wafers

SBIR Phase I: Model-Based Control of Millisecond Flash Annealing of Semiconductor Wafers
SBIR 第一阶段:基于模型的半导体晶圆毫秒闪光退火控制
批准号:
1013689
负责人:
Jon Ebert
金额:
$15.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-07-01 至 2010-12-31

项目摘要

项目成果

Jon Ebert的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
This Small Business Innovative Research (SBIR) Phase I project will demonstrate the feasibility of using model-based control of temperature and stress for millisecond flash annealing of semiconductor wafers. In response to the demand for ever faster chips that consume less power, the tools for fabrication of integrated circuits (IC's) are required to provide increasingly precise control of the manufacturing process, e.g., control of the transient wafer temperature during thermal processing. The manufacture of an IC involves hundreds of steps. One of these steps is thermal annealing used for dopant activation, a critical step in IC chip manufacturing. Next-generation IC's need very shallow and abrupt junctions that require annealing over shorter time periods and at higher temperatures, which is not possible with current conventional spike annealing equipment. Millisecond annealing with pulsed flash-lamps has the potential to meet the new annealing requirements. However, challenges related to reproducibility and stress-induced wafer damage must be overcome before flash anneal can be used in high-volume manufacturing. The project proposes to develop and commercialize a control software product to help accelerate the transition of flash anneal to the semiconductor industry. The broader impact/commercial potential of this project is in its ability to help enable widespread adoption of flash anneal during semiconductor wafer processing. There is a significant potential for millisecond flash anneal to complement and eventually replace conventional lamp-based Rapid Thermal Processing (RTP) for some important steps in semiconductor manufacturing. The RTP market has reached close to $308 million in 2008, and is expected to grow significantly in the future. The proposed product will enable flash annealing to meet the formidable process control requirements and economic metrics, and help transition it to high-volume manufacturing. This will benefit customers and will in turn benefit the IC makers and ultimately benefit US consumers with smaller, faster, lower power devices. These innovations will make a significant contribution to advancing production technologies for future microelectronic devices, which will benefit the society at large.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
SBIR Phase II: An Integrated Software Tool for Modeling and Model-Based Control of Semiconductor Manufacturing Equipment
  • 批准号:
    0450482
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2005
  • 负责人:
    Jon Ebert
  • 依托单位:
SBIR Phase I: An Integrated Software Tool for Modeling and Model-Based Control of Semiconductor Manufacturing Equipment
  • 批准号:
    0319970
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
    2003
  • 负责人:
    Jon Ebert
  • 依托单位:
国内基金
海外基金
Baryogenesis, Dark Matter and Nanohertz Gravitational Waves from a Dark Supercooled Phase Transition
  • 批准号:
    24ZR1429700
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    YUICHIRO NAKAI
  • 依托单位:
ATLAS实验探测器Phase 2升级
  • 批准号:
    11961141014
  • 项目类别:
    国际(地区)合作与交流项目
  • 资助金额:
    3350万元
  • 批准年份:
    2019
  • 负责人:
    刘衍文
  • 依托单位:
地幔含水相Phase E的温度压力稳定区域与晶体结构研究
  • 批准号:
    41802035
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    12.0万元
  • 批准年份:
    2018
  • 负责人:
    张里
  • 依托单位:
基于数字增强干涉的Phase-OTDR高灵敏度定量测量技术研究