SBIR Phase I: Three-axis Vector Magnetometer with Novel Z-axis Sensor

SBIR 第一阶段：配备新型 Z 轴传感器的三轴矢量磁力计

• 批准号: 1013982
• 负责人: Joseph Davies
• 金额: $ 14.98万
• 依托单位: NVE CORPORATION
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-07-01 至 2011-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1013982&HistoricalAwards=false
• 关键词: SBIR; Phase; Three; axis; Vector

This Small Business Innovation Research (SBIR) Phase I project will demonstrate the feasibility of combining novel nanostructured cobalt-transition metal (Co/TM, TM= Ni, Pd, Pt, Au) multilayer films with magnetic tunnel junctions (MTJs) to produce a z-axis magnetic field sensor with application to a 3-axis vector magnetometer. Nanostructured Co/TM multilayers are unique in that their magnetization direction can be tailored to be normal to the film plane. Thus an increased sensitivity to magnetic fields applied along the film normal direction can be established. These materials have readily tunable growth parameters making them ideal for a range of applications, however much of the research has focused on magnetic media with large amount of magnetic hysteresis. Here novel Co/TM-based MTJ?s will be developed and produced with the hysteresis minimized by tailoring the perpendicular anisotropy as well as sensor geometry in order to demonstrate a viable z-axis field sensor. The expected result is that sensors with sensitivity comparable to conventional ?in-plane? magnetoresistive sensors will be demonstrated and presented in connection with this technology?s incorporation into a 3-axis vector magnetometer.The broader impact/commercial potential of this project would be significant in that many areas from navigation, biomedical, security to consumer electronics would benefit from the proposed z-axis sensor and resulting single-chip 3-axis magnetometer. Current technology typically uses multi-chip or coil configurations, greatly increasing the device footprint. Otherwise, less sensitive Hall sensors are used. The novel z-axis sensor proposed here would allow for placement of a more sensitive z-axis sensor in the same package as the in-plane sensors and greatly reduce the footprint and improve performance. This is particularly critical in portable biomedical, security and consumer electronics applications that continually look to increase functionality while reducing device size. This device configuration would also reduce the required power compared to conventional AMR sensors, making a more efficient use of battery life for portable devices. The development of the magnetically soft Co/TM multilayer films required for this application could also have applications beyond vector magnetometry as the required properties are also sought after for applications such as power generation and current tunable oscillators. The technology from this project will have high commercialization potential with the obtained scientific knowledge being applicable to other areas that look to utilize nanostructured magnetic materials.

这个小型企业创新研究（SBIR）第一阶段项目将展示将新型纳米结构钴过渡金属（Co/TM， TM= Ni, Pd, Pt, Au）多层膜与磁隧道结（MTJs）结合的可行性，以生产z轴磁场传感器，并应用于3轴矢量磁强计。纳米结构Co/TM多层膜的独特之处在于它们的磁化方向可以被定制为与薄膜平面垂直。因此，可以建立对沿膜法向施加的磁场的灵敏度增加。这些材料具有易于调节的生长参数，使其成为一系列应用的理想选择，然而，许多研究都集中在具有大量磁滞的磁介质上。这里有新颖的基于Co/ tm的MTJ？S的开发和生产将通过剪裁垂直各向异性和传感器几何形状来最小化迟滞，以展示一个可行的z轴场传感器。预期的结果是，传感器的灵敏度可与传统的平面内传感器相媲美。磁阻传感器将与这项技术相结合进行演示和介绍。S并入3轴矢量磁强计。该项目的广泛影响/商业潜力将是重大的，因为从导航，生物医学，安全到消费电子等许多领域都将受益于拟议的z轴传感器和由此产生的单芯片3轴磁力计。目前的技术通常使用多芯片或线圈配置，大大增加了设备的占地面积。否则，使用灵敏度较低的霍尔传感器。本文提出的新型z轴传感器将允许在与平面内传感器相同的封装中放置更敏感的z轴传感器，从而大大减少占地面积并提高性能。这在便携式生物医学，安全和消费电子应用中尤其重要，这些应用不断寻求在减小设备尺寸的同时增加功能。与传统的AMR传感器相比，这种设备配置还可以减少所需的功率，从而更有效地利用便携式设备的电池寿命。该应用所需的软磁Co/TM多层膜的开发也可以应用于矢量磁强计之外的应用，因为发电和电流可调振荡器等应用也需要所需的性能。该项目的技术将具有很高的商业化潜力，所获得的科学知识将适用于其他希望利用纳米结构磁性材料的领域。

项目成果

Reversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo-spin-valves

• DOI: 10.1063/1.4813393
• 发表时间: 2013-07-08
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Davies, J. E.;Gilbert, D. A.;Liu, Kai
• 通讯作者: Liu, Kai