SBIR Phase I: Towards Thin Film Solar Cells Through Topdown Aluminum Induced Metallization (TAIC) Providing 12% Module Efficiency

SBIR%20Phase%20I:%20%20Towards%20Thin%20Film%20Solar%20Cells%20Through%20Topdown%20Aluminum%20Induced%20Metallization%20(TAIC)%20Providing%2012%%20Module%20效率

• 批准号: 1047296
• 负责人: Douglas Hutchings
• 金额: $ 15万
• 依托单位: Silicon Solar Solutions
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-01-01 至 2011-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1047296&HistoricalAwards=false
• 关键词: SBIR; Phase; Towards; Thin; Film

This Small Business Innovation Research (SBIR) Phase I project aims to use a new top-down Aluminum Induced Crystallization (TAIC) technology to create thin-film silicon solar modules with over 12% efficiency. First, large-grain crystallization of hydrogenated amorphous silicon thin film with thicknesses needed for solar cells will be obtained using TAIC. Second, the doping of resultant films to suitable levels by annealing samples in an atomic hydrogen environment will be studied. It is expected to create over 12% efficiency thin-film solar modules with low temperatures (less than 300 degree Celsius) required. The broader/commercial impact of this project will be the potential to provide a method for thin-film silicon solar cell manufacturers to effectively improve the energy conversion efficiency with minimal additional cost. The limited efficiencies of amorphous silicon thin-film solar cells curtail their market adoption. While polycrystalline silicon solar cells have the highest potential of any thin-film silicon option, the manufacturability is still a concern. Current crystallization process requires temperatures in excess of 550 degree Celsius for over 20 hours. In this project, TAIC technology will be utilized to eliminate these disadvantages to manufacturing by creating very large-grain polycrystalline silicon thin films at low temperatures and in a short time (minutes).

这个小型企业创新研究(SBIR)第一阶段项目旨在使用一种新的自上而下的铝诱导结晶(TAIC)技术来制造效率超过12%的薄膜硅太阳能组件。首先，使用TAIC技术将获得太阳能电池所需厚度的氢化非晶硅薄膜的大颗粒晶化。其次，我们将研究在原子氢环境中，通过对样品进行退火热处理，将得到的薄膜掺杂到合适的水平。预计它将创造出12%以上的能效超过12%的低温(低于300摄氏度)的薄膜太阳能组件。该项目的更广泛/商业影响将是为薄膜硅太阳能电池制造商提供一种方法，以最小的额外成本有效地提高能源转换效率。非晶硅薄膜太阳能电池的有限效率限制了它们的市场应用。虽然多晶硅太阳能电池在所有薄膜硅选择中具有最高的潜力，但可制造性仍然是一个令人担忧的问题。目前的结晶工艺要求温度超过550摄氏度，持续20小时以上。在该项目中，将利用TAIC技术，通过在低温和短时间(几分钟)内制备非常大颗粒的多晶硅薄膜来消除这些不利因素。