MRI: Acquisition of a THz Spectroscopic Ellipsometer

该奖项授予托莱多大学，以表彰其购买太赫兹光谱椭偏仪，以便在0.11至1.45太赫兹范围内测量材料的光学性质和结构。这一区域的光学性质预计对自由载流子的振动模式和吸收很敏感；椭圆偏振光谱也可以用来推断层厚度、界面形成和梯度。在太赫兹波段，光学性质接近直流极限，因此可以用来推断材料的电学性质(载流子浓度、迁移率等)。从非接触式光学测量中提取电特性的能力对于探测器件结构中的材料或难以进行传统电学表征的领域特别有吸引力，包括光伏材料和器件；用于非制冷红外传感器的微测辐射热计材料；包括纳米颗粒薄膜、碳纳米管薄膜、超材料和工程薄膜的结构材料；铁电材料和其他氧化物材料；薄膜晶体管；以及聚合物薄膜。托莱多大学的THz光谱椭圆仪将帮助研究生和本科生进行研究，并使其他大学、政府实验室和行业的研究人员能够合作，揭示材料的光学、电学和结构属性之间的联系。它被认为是在用户付费和协作基础上唯一可用的同类工具，预计将提供新的机会，并进一步发展计量和分析专门知识网络。太赫兹椭圆偏振光谱仪的研究具有发现新的基本信息的强大潜力，并将增强材料和器件中物理机制的知识库，用于技术(电子电路中的元件层)、安全(化学和红外传感器)和能源(光伏)应用。同时，它将使下一代科学家和工程师能够进行研究培训，他们将进一步发展其能力，并将其应用于探索新的研究领域。

This award to the University of Toledo is for the acquisition of a Terahertz Spectroscopic Ellipsometer to measure optical properties and structure of materials over a range from 0.11 to 1.45 THz. Optical properties in this region are expected to be sensitive to vibrational modes and absorption due to free carriers; and spectroscopic ellipsometry can also be used to deduce layer thicknesses, interfacial formation, and gradients. In the THz regime, optical properties approach the DC limit, thus they can be used to extrapolate electrical properties of materials (carrier concentration, mobility, etc.). The ability to extract electrical properties from a non-contacting optical measurement is particularly attractive for probing materials in device structures or where traditional electrical characterization is difficult including photovoltaic materials and devices; microbolometer materials for uncooled infrared sensors; structured materials including nanoparticle films, carbon nanotube films, metamaterials, and engineered thin films; ferroelectrics and other oxide materials; thin film transistors; and, polymer thin films.The THz Spectroscopic Ellipsometer at the University of Toledo will assist in graduate and undergraduate student research, as well as enabling collaborations between researchers at other universities, government laboratories, and industry, in uncovering connections between optical, electrical, and structural properties of materials. It is believed to be the only tool of its kind available on both a user fee and collaborative basis and is expected to provide new opportunities and further develop networks of measurement and analytical expertise. Research resulting from THz spectroscopic ellipsometry has strong potential to uncover new fundamental information and will enhance the knowledge base of physical mechanisms in materials and devices for technological (component layers in electronic circuits), security (chemical and infrared sensors), and energy (photovoltaics) applications. Simultaneously, it will enable the research training of the next generation of scientists and engineers, who will further develop its capabilities and apply them in exploring new research areas.