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Colloidal III-V Nanomaterials: New Opportunities in Chemistry and Device Applications

Colloidal III-V Nanomaterials: New Opportunities in Chemistry and Device Applications
胶体 III-V 纳米材料:化学和器件应用的新机遇
批准号:
1310398
负责人:
Dmitri Talapin
金额:
$45.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-09-01 至 2016-11-30

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中文摘要
翻译
技术概述:III-V半导体,如GaAs、InP、InAs和InSb,用于激光二极管、光电探测器、快速电子电路和最高效的太阳能电池。然而,对开发溶液加工形式的III-V半导体以低成本制造这一重要类别的材料并使其进入广泛的能源相关技术市场的关注非常有限。这项研究由NSF固态和材料化学计划支持,专注于III-V纳米材料的新合成和表面化学。它将探索胶体合成III-V半导体纳米晶的新方法。将特别关注基于分子金属硫化物络合物和锡酸锌离子的III-V纳米结构的新型无机表面配体的开发。由于III-V半导体的多谷能带结构和强耦合纳米晶体组件中集体电子态(微带)的出现,强量子限制和新的无机表面化学的结合可能导致新的物理,也可能导致这类重要半导体的新应用。非技术摘要:最快的商用晶体管和最高效的太阳能电池使用III-V半导体,如砷化镓。与此同时,与制备和处理III-V半导体相关的技术困难,使它们无法在大型消费市场上与硅和其他价格较低的材料竞争。该项目由美国国家科学基金会固态和材料化学计划支持,专注于开发新的可溶形式的III-V半导体,用于低成本制造绿色能源技术中应用的新材料。这项拟议的研究将创造一种新的廉价半导体,适用于电子产品、发光设备和太阳能电池。研究计划还将涉及代表性不足的少数群体的参与,以及对芝加哥南部社区的公开宣传。这些活动将有助于招收少数族裔和弱势学生,并促进他们在科学和工程领域的职业追求。
英文摘要
TECHNICAL SUMMARY:III-V semiconductors, such as GaAs, InP, InAs and InSb, are used in laser diodes, photodetectors, fast electronic circuits and the most efficient solar cells. However, very limited attention has been paid to development of solution-processed forms of III-V semiconductors for low-cost manufacturing of this important class of materials and making it accessible to broad markets of energy-related technologies. The research supported by the NSF Solid State and Materials Chemistry program focuses on new synthetic and surface chemistry for III-V nanomaterials. It will explore novel approaches to colloidal synthesis of III-V semiconductor nanocrystals. Special attention will be paid to development of new inorganic surface ligands for III-V nanostructures based on molecular metal chalcogenide complexes and pnictide Zintl ions. The combination of strong quantum confinement and new inorganic surface chemistry can lead to new physics due to the multi-valley band structure of III-V semiconductors and due to emergence of the collective electronic states (minibands) in strongly coupled nanocrystal assemblies; it may also lead to new applications for this important class of semiconductors. NON-TECHNICAL SUMMARY:The fastest commercial transistors and the most efficient solar cells use III-V semiconductors such as GaAs. At the same time technological difficulties associated with preparation and handling III-V semiconductors do not allow them to compete with silicon and other less expensive materials for large consumer markets. This project supported by the NSF Solid State and Materials Chemistry program focuses on development of new soluble forms of III-V semiconductors for low-cost manufacturing of new materials for applications in green energy technologies. The proposed research will create a new class of inexpensive semiconductors suitable for applications in electronics, light-emitting devices and solar cells. Research program will also involve participation of underrepresented minority groups and public outreach to the south side Chicago community. These activities will help recruit minorities and disadvantaged students and promote their pursuit of careers in science and engineering.
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