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NSF: Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD). Date:February 16-19, 2014 at The Menger Hotel, San Antonio, TX.

NSF: Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD). Date:February 16-19, 2014 at The Menger Hotel, San Antonio, TX.
NSF:化合物半导体材料研讨会
批准号:
1408329
负责人:
William Doolittle
金额:
$1.53万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-02-15 至 2014-07-31

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中文摘要
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英文摘要
The 2014 Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD) will address research areas in III-V compound semiconductor field. Growth and material properties of 2D layered semiconductors, optoelectronic and electronic device applications of 2D semiconductor materials and their heterostructures will be a major area on which the Workshop will focus. It is one of the few workshop format meetings where the latest results can be debated and discussed in a relatively open format. WOCSEMMAD has played a key role in identifying new directions for research. The workshop will be held February 16-19, 2014 at the Menger Hotel, San Antonio, TX and the project will support student participation. WOCSEMMAD's broader impact will be on the design and development of novel new devices and materials. Along with these new materials and devices, new industries and jobs will be created with lasting impact on science and economy.
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Controlling AlInGaN/Silicon Interface Kinetics
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海外基金