Emergent Quantum Phenomena in Topological Kondo Insulators

拓扑近藤绝缘体中的涌现量子现象

基本信息

  • 批准号:
    1410665
  • 负责人:
  • 金额:
    $ 42万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2014
  • 资助国家:
    美国
  • 起止时间:
    2014-08-01 至 2018-07-31
  • 项目状态:
    已结题

项目摘要

Non-Technical AbstractThis award from the Condensed Matter Physics program of the Division of Materials Research supports research on the electronic properties of a new class of material known as Topological Insulators. A topological insulator is an unusual quantum state in which the bulk of the material is an electrical insulator, while the surface is a conductor that is stable against various external perturbations. Topological insulators have generated great scientific excitement over the past few years because of the novel electrical properties and their potential application as advanced electronic devices in areas such as quantum computation and spin transport. However, all of the materials discovered to date have a non-insulating bulk transport behavior because of unavoidable defects in the material; therefore, they do not exhibit ideal or useful topological properties. A recent theory has suggested that a special class of material, known as a Kondo insulator, would be a topological insulator with a true bulk insulating state. Researchers at the University of Maryland conduct measurements of the electronic properties of known Kondo insulators to investigate their possible topological behavior and to test their suitability for new and novel electronic applications. This research project involves the training of undergraduate and graduate students in advanced measurement techniques and in cutting edge scientific knowledge of materials physics.Technical AbstractResearchers at the University of Maryland are undertaking experimental studies of electronic transport phenomena in different Kondo insulator systems that are theoretically suggested to harbor topological surface states. Understanding the novel properties of topological insulators and the role of strong electron correlations on topological properties is a major basic science problem in condensed matter physics. The recent discovery of a surface metallic state in the Kondo insulator SmB6 suggests that strongly correlated TIs may exist. However, despite many unconventional transport phenomena recently found in SmB6, the "smoking gun" evidence for a nontrivial topological surface state has yet to been established. This study emphasizes the transport properties of thin films and single crystals at low temperatures (down to 20 mK), where novel emergent quantum phenomena are expected to be prominent. The project uses point contact spectroscopy, static electric field effect studies, and high magnetic field transport measurements and microwave and optical measurements on promising KI materials. An important thrust of this project is the study of the proximity effect, since it has been predicted that incorporating topological insulators with ferromagnetic insulators and/or conventional superconductors may lead to exotic properties such as Majorana fermion excitations. All the materials required for these measurements are being synthesized and characterized in-house. This research project involves the training of undergraduate and graduate students in advanced measurement techniques and in cutting edge scientific knowledge of materials physics.
非技术摘要该奖项来自材料研究部凝聚态物理项目,支持对称为拓扑绝缘体的新型材料的电子特性的研究。拓扑绝缘体是一种不寻常的量子态,其中材料的主体是电绝缘体,而表面是对各种外部扰动稳定的导体。拓扑绝缘体由于其新颖的电特性及其在量子计算和自旋输运等领域作为先进电子器件的潜在应用,在过去几年中引起了巨大的科学兴奋。然而,由于材料中不可避免的缺陷,迄今为止发现的所有材料都具有非绝缘散装运输行为。因此,它们没有表现出理想或有用的拓扑特性。最近的一项理论表明,一种特殊的材料,称为近藤绝缘体,将是一种具有真正体绝缘状态的拓扑绝缘体。马里兰大学的研究人员对已知近藤绝缘体的电子特性进行测量,以研究它们可能的拓扑行为并测试它们对新型电子应用的适用性。该研究项目涉及对本科生和研究生进行先进测量技术和材料物理前沿科学知识的培训。技术摘要马里兰大学的研究人员正在对不同近藤绝缘体系统中的电子输运现象进行实验研究,这些系统在理论上建议具有拓扑表面态。了解拓扑绝缘体的新特性以及强电子相关性对拓扑特性的作用是凝聚态物理中的一个主要基础科学问题。 最近在近藤绝缘体 SmB6 中发现的表面金属态表明可能存在强相关的 TI。然而,尽管最近在 SmB6 中发现了许多非常规输运现象,但尚未建立非平凡拓扑表面态的“铁证”。 这项研究强调了薄膜和单晶在低温(低至 20 mK)下的输运特性,预计新的量子现象将在低温下表现突出。 该项目使用点接触光谱、静电场效应研究、高磁场输运测量以及微波和光学测量来研究有前景的 KI 材料。该项目的一个重要推动力是研究邻近效应,因为据预测,将拓扑绝缘体与铁磁绝缘体和/或传统超导体结合可能会产生奇异的特性,例如马约拉纳费米子激发。这些测量所需的所有材料均在内部合成和表征。该研究项目涉及对本科生和研究生进行先进测量技术和材料物理前沿科学知识的培训。

项目成果

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richard greene其他文献

richard greene的其他文献

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{{ truncateString('richard greene', 18)}}的其他基金

Investigation of the strange metal normal state of electron-doped oxide superconductors
电子掺杂氧化物超导体奇异金属正常态的研究
  • 批准号:
    2002658
  • 财政年份:
    2020
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
A study of unconventional transport in electron-doped oxide superconductors
电子掺杂氧化物超导体的非常规输运研究
  • 批准号:
    1708334
  • 财政年份:
    2017
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Novel Electronic Properties of Unconventional Superconductors
非常规超导体的新颖电子特性
  • 批准号:
    1104256
  • 财政年份:
    2011
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Electronic Properties of Electron-Doped Oxide Superconductors.
电子掺杂氧化物超导体的电子特性。
  • 批准号:
    0653535
  • 财政年份:
    2007
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Investigation of the Low Temperature Normal State of Electron-Doped Copper Oxides
电子掺杂氧化铜低温常态的研究
  • 批准号:
    0352735
  • 财政年份:
    2004
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
US-India Cooperative Research: Studies of the Vortex State vis-a-vis d-wave Superconductivity in Epitaxial Films of La2-xSrxCuO4
美印合作研究:La2-xSrxCuO4 外延膜中与 d 波超导相关的涡旋态研究
  • 批准号:
    0242867
  • 财政年份:
    2003
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
Physical Properties of Electron-Doped Copper Oxides
电子掺杂氧化铜的物理性质
  • 批准号:
    0102350
  • 财政年份:
    2001
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
Investigation of Pairing Symmetry and Normal State Properties of Electron-Doped Copper Oxides
电子掺杂氧化铜的配对对称性和正常态性质的研究
  • 批准号:
    9732736
  • 财政年份:
    1998
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Preparation and Physical Properties of Single Crystals and Thin Films of Neodimium Cerium Copper Oxides and Related Copper Oxides
铌铈铜氧化物及相关铜氧化物单晶和薄膜的制备及物理性能
  • 批准号:
    9510475
  • 财政年份:
    1995
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Preparation and Properties of Low Tc Copper Oxide Single Crystals
低Tc氧化铜单晶的制备及性能
  • 批准号:
    9209668
  • 财政年份:
    1992
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant

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职业:拓扑狄拉克半金属及其异质结构外延薄膜中的量子现象
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