Multiphysical circuit design based on microacoustic RF-MEMS components

第一阶段获得的BAW-MEMS器件非理想特性的建模和补偿结果，为第二阶段扩展多物理场（电磁声热）建模方法和优化无线电系统层次上的微声mems器件提供了主要输入。BAW MEMS元件的参数化多物理行为模型将通过与TP-B3密切合作的自加热和非线性（x参数模型）领域进行扩展。这将使无线电系统层次结构上的小信号和大信号行为的优化成为可能。通过这种方式，无线电系统在大信号水平上的功率耐久性考虑之间的权衡，为实现不同温度和非线性补偿方法所需的新沉积工艺的开发所做的努力，从而导致小信号性能的退化或进一步无线电系统组件的优化将变得可行。对于这一步骤，还需要通过具有优化线性行为的BAW元件扩展BAW MEMS库。优化后的BAW元件应应用于MUSIK演示器的高功率TX路径内，并由TP-C1和TP-C2在SiCer单片衬底上制造。

The results on the modeling and compensation of the non ideal behavior of the BAW-MEMS components obtained during phase 1provide the main input for the extension of the multiphysics (electromagnetic acoustic thermal) modeling approach and theoptimization of the micro acoustic MEMS-components on the radio system hierarchy level for phase 2. The parameterized multiphysicalbehavior models for the BAW MEMS components will be extended by the self-heating and nonlinear (X-parameters model) domains in close cooperation with TP-B3. That will enable the optimization of not just the small but also of the large signal behavior on the radio system's hierarchy level. In that way the tradeoffs between the power durability considerations of the radio system at the large signal levels, the effort for the development of new deposition processes required for the implementation of the different temperature and nonlinearity compensation methods, the thereby caused degradation of the small signal performance or the optimization of further radio system components will become feasible. For that step also the extension of the BAW MEMS library by BAW components with optimized linear behavior becomes necessary. The optimized BAW components should be applied within the high power TX path of the MUSIK demonstrator and manufactured by TP-C1 and TP-C2 on the SiCer monolithic substrate.