SBIR Phase I: Novel Structure for Efficient and Reliable Medium Voltage Silicon Carbide (SiC) Power Devices

SBIR 第一阶段：高效可靠的中压碳化硅 (SiC) 功率器件的新颖结构

• 批准号: 2126732
• 负责人: Adam Morgan
• 金额: $ 25.59万
• 依托单位: NOMIS POWER GROUP LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-11-15 至 2024-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2126732&HistoricalAwards=false
• 关键词: SBIR; Phase; Novel; Structure; Efficient

The broader impact/commercial potential of this Small Innovation Research (SBIR) Phase I project is to improve the efficiency and reliability power conversion systems (PCSs) while also reducing the complexity and cost. System builders and end-users of power electronics for PCS may benefit from proposed advancements in power semiconductor technology that are translated to cheaper and more resilient and sustainable electricity generation, distribution, and consumption. The interconnections of distributed energy resources and energy storage systems within DC (direct current) micro-grids and interfaces between DC micro-grids and legacy AC (alternating current) distribution grid networks will be made simpler, more efficient, and more reliable when the proposed power semiconductor devices become ubiquitous within future PCS.This Small Business Innovation Research (SBIR) Phase I project will improve advanced power semiconductor processing techniques. Specifically, the project focuses on: 1) developing a reliable semiconductor-based, high power electronic switch in the form of a SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor), 2) optimizing the electronic switch parameters to achieve the best trade-off between efficiency and reliability, and 3) fully characterizing the electrical performance of the electronic switch. The research will involve the design of experiments to determine the optimal set of electronic switch parameters that take into account manufacturing limitations of the semiconductor processing equipment. The teams seeks to produce a functioning semiconductor-based, high power electronic switch that is capable of operating more reliably and more efficiently than what is presently available in the market. The team also seeks to enable even higher power electronic switches to be made by means of scaling the resultant SiC MOSFET technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这个小型创新研究（SBIR）第一阶段项目的更广泛影响/商业潜力是提高功率转换系统（pcs）的效率和可靠性，同时降低复杂性和成本。系统制造商和pc电力电子产品的最终用户可能会从功率半导体技术的进步中受益，这些技术将转化为更便宜、更有弹性和可持续的发电、配电和消费。当所提出的功率半导体器件在未来pc中无处不在时，直流（直流）微电网内分布式能源和储能系统的互连以及直流微电网与传统交流（交流）配电网网络之间的接口将变得更简单，更高效，更可靠。这个小企业创新研究（SBIR）第一阶段项目将改进先进的功率半导体加工技术。具体而言，该项目侧重于：1)开发一种可靠的基于半导体的高功率电子开关，其形式为SiC MOSFET（碳化硅金属氧化物半导体场效应晶体管），2)优化电子开关参数以实现效率和可靠性之间的最佳权衡，3)充分表征电子开关的电气性能。该研究将涉及设计实验，以确定考虑到半导体加工设备制造限制的最佳电子开关参数集。该团队寻求生产一种基于半导体的功能，高功率电子开关，能够比目前市场上可用的更可靠，更有效地运行。该团队还寻求通过缩放所得的SiC MOSFET技术来实现更高功率的电子开关。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。