In situ transmission electron microscopy of resistive switching devices (B09)

在B9项目中，重点将放在新型PCM和VCM材料在开关过程中的原位TEM表征上。原子结构和局部电场分布的变化将使用像素化STEM技术和离轴电子全息技术以亚纳米的空间分辨率进行跟踪。对于PCMs，主要的重点将放在空间受限设备的研究上，因为设备尺寸小，保留时间短，使成像复杂化。对于vcm，主要的焦点将放在缺陷的研究上，这需要亚原子分辨率的结构和化学分析。

In Project B9, the focus will be on in situ TEM characterization of novel PCM and VCM materials during switching processes. Changes in atomic structure and local electric field distributions will be tracked with sub-nm spatial resolution using both pixelated STEM techniques and off-axis electron holography. For PCMs, the primary focus will be on studies of spatially confined devices, for which the small device sizes and short retention times complicate imaging. For VCMs, the primary focus will be on studies of defects, which require sub-atomic-resolution structural and chemical analysis.