Adapted converter topologies for GaN power electronics

在工业和自动化、消费电子、交通和电网等不同领域，特别是在可再生能源的整合方面，电力电子技术的高效能源转换日益重要。由于其优异的导电和开关性能，基于氮化镓（GaN）的功率半导体提供了实现高度紧凑同时高效的功率转换器的可能性。为了简化现有的和开发新的转换器拓扑结构，制造双向导电和阻塞晶体管的技术选择是有希望的。在本研究项目中，利用GaN常关晶体管（hfet）的双向导通行为，并应用优化的驱动概念和电路，评估了硬开关GaN变换器在kW功率范围内的极限。双向阻断氮化镓hfet将开发，制造和测试适应驱动器的概念。最后，将对这些设备进行建模。使用这些模型，将模拟、评估替代转换器拓扑结构，并实现一个演示器，以展示这种新技术的潜力。

Efficient energy conversion with power electronics is of continuously increasing importance in different areas as industry and automation, consumer electronics, transportation and electric grids, here especially concerning the integration of regenerative energy sources. Due to their excellent conducting and switching properties, power semiconductors based on Galliumnitride (GaN) offer the possibility to realize highly compact and at the same time highly efficient power converters. The technological option to manufacture bidirectional conducting and blocking transistors is promising in order to simplify existing and develop new converter topologies. In this research project, the limits of hard-switching GaN-converters in the kW power range is evaluated, making use of the bidirectional conduction behaviour of GaN normally-off transistors (HFETs) and applying optimized driver concepts and circuits. Bidirectional blocking GaN HFETs will be developed, manufactured and tested adapting the driver concept. Finally, the devices will be modelled. Using these models, alternative converter topologies will be simulated, evaluated and a demonstrator will be realized to show the potential of this new technology.