Adapted converter topologies for GaN power electronics

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Efficient energy conversion with power electronics is of continuously increasing importance in different areas as industry and automation, consumer electronics, transportation and electric grids, here especially concerning the integration of regenerative energy sources. Due to their excellent conducting and switching properties, power semiconductors based on Galliumnitride (GaN) offer the possibility to realize highly compact and at the same time highly efficient power converters. The technological option to manufacture bidirectional conducting and blocking transistors is promising in order to simplify existing and develop new converter topologies. In this research project, the limits of hard-switching GaN-converters in the kW power range is evaluated, making use of the bidirectional conduction behaviour of GaN normally-off transistors (HFETs) and applying optimized driver concepts and circuits. Bidirectional blocking GaN HFETs will be developed, manufactured and tested adapting the driver concept. Finally, the devices will be modelled. Using these models, alternative converter topologies will be simulated, evaluated and a demonstrator will be realized to show the potential of this new technology.