Hot-Wire Chemical Vapor Deposition System

热丝化学气相沉积系统

• 批准号: 282211330
• 金额: --
• 依托单位: Universität zu Köln
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/282211330?language=en
• 关键词: Hot; Wire; Chemical; Vapor; Deposition

The head of the group is a researcher of topological insulators (TIs) and topological superconductors (TSCs). Our group has been doing research at Osaka University, but is moving to the University of Cologne to focus more on the fundamental physics of TIs and TSCs. One of the objectives of our research is to discover novel quantum phenomena in TIs and TSCs, which requires fabrications of state-of-the-art devices based on these materials. The hot-wire chemical vapor deposition (HWCVD) system is a very useful tool for depositing high-quality SiNx dielectric layer at low temperature for top-gate fabrications on TIs without degrading the surface quality, and our group is already using this tool to fabricate various devices at Osaka. However, there is unfortunately no HWCVD system at the University of Cologne, and hence it is impossible for us to continue doing the research in this core area without buying a new HWCVD system.

该小组的负责人是拓扑绝缘体（TI）和拓扑超导体（TSC）的研究人员。我们的团队一直在大坂大学进行研究，但正在转移到科隆大学，以更多地关注TI和TSC的基础物理学。我们研究的目标之一是发现TI和TSC中的新量子现象，这需要基于这些材料制造最先进的设备。热线化学气相沉积（HWCVD）系统是一个非常有用的工具，用于在低温下沉积高质量的氮化硅介电层，用于在TI上制造顶栅，而不会降低表面质量，我们的团队已经在大坂使用这种工具制造各种器件。然而，不幸的是，科隆大学没有HWCVD系统，因此，如果不购买新的HWCVD系统，我们就不可能继续在这一核心领域进行研究。