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Hot-Wire Chemical Vapor Deposition System

Hot-Wire Chemical Vapor Deposition System
热丝化学气相沉积系统
批准号:
282211330
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
德国
项目类别:
Major Research Instrumentation
财政年份:
2015
资助国家:
德国
项目状态:
未结题
起止时间:
2014-12-31 至 --

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英文摘要
The head of the group is a researcher of topological insulators (TIs) and topological superconductors (TSCs). Our group has been doing research at Osaka University, but is moving to the University of Cologne to focus more on the fundamental physics of TIs and TSCs. One of the objectives of our research is to discover novel quantum phenomena in TIs and TSCs, which requires fabrications of state-of-the-art devices based on these materials. The hot-wire chemical vapor deposition (HWCVD) system is a very useful tool for depositing high-quality SiNx dielectric layer at low temperature for top-gate fabrications on TIs without degrading the surface quality, and our group is already using this tool to fabricate various devices at Osaka. However, there is unfortunately no HWCVD system at the University of Cologne, and hence it is impossible for us to continue doing the research in this core area without buying a new HWCVD system.
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基于Arcing wire PAW的铝锂合金异质三丝合金化增材制造机理与控制