Application of Single-walled Carbon Nanotube Coated by Boron Nitride Nanotubes in Field Emission Transistors

本课题的目的是实现氮化硼包覆单壁碳纳米管在场效应晶体管器件中的应用。我们已经成功地用我们的材料制造了这个装置。此外，我们还通过去除碳纳米管和氮化硼纳米管异质结构中的碳纳米管，获得了高纯度和高质量的氮化硼纳米管薄膜。氮化硼纳米管为研究过渡金属二硫化物纳米管的光学性质提供了一个很有前途的平台，二硫化钼纳米管的光致发光被观察到。氮化硼纳米管与二硫化钼纳米管组成的杂碳纳米管在电子器件中具有很大的应用潜力。

The purpose of this project is to achieve the application of boron nitride coated single-walled carbon nanotubes in FET devices. We have sucessfully fabricated the device using our material. Moreover, We have also obtained high-purity and high-quality boron nitride nanotube film by removing carbon nanotubes in the heterostructure of carbon nanotube and boron nitride nanotube. Boron nitride nanotubes based heteronanotubes served as a promising platform for investigating the optical properties of transition metal dichalcogenide nanotubes, photoluminescence from molybdenum disulfide nanotubes was observed. The heteronanotubes of boron nitride nanotubes with molybdenum disulfide nanotubes have a great potential for the electronic device applications.