Investigation of two-color lasing in a semiconductor multilayer coupled cavity and terahertz wave generation

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In order to realize a terahertz light emitting semiconductor device, we investigated a two-color surface-emitting-laser-diode with a semiconductor-multilayer coupled-cavity. We obtained high quality InAs quantum-dots in an InGaAs quantum well on a GaAs(001) substrate which have a broad gain spectrum covering two color emission around 1.3um. We also fabricated coupled-cavity structures by wafer bonding with a GaAs(113)B substrate which has the second order nonlinear effects. Properties of emission from the coupled cavity structure were characterized, and two-color lasing by optical pumping was demonstrated. We also developed the device structure and process technologies for two-color lasing by current injection.