Quantumferroelectric thermosensor for application of microcalorimeter

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A quantumparaelectric material has a large constant value of the electric capacitance in low temperatures below several K. By doping adequate impurities, the quantumparaelectric material expeiences the phase transition to the quantumferroelectric material. The electric capacitance of the quantumferroelectric material has large temperature dependence in the temperature region of 100 mK. In this work, an impurity doped KTN sample was found to experience the phase transition from the quantumparaelectric state to the the quantumferroelectric state. The impurity doped KTN is expected to be used for the thermosensor of the microcalorimeter because of the temperature dependence of the electric capacitance in the temperature region of 100 mK.