High Enthalpy Flow Generation by Dispersed Laser Plasmas Using aSemiconductor Laser Array

使用半导体激光阵列通过色散激光等离子体产生高焓流

• 批准号: 24656517
• 负责人: ARAKAWA Yoshihiro
• 金额: $ 1.75万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012 至 无数据
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24656517/
• 关键词: 高エンタルピー流; レーザープラズマ; 半導体レーザー

Progress of future space development and space environment utilization requires a next-generation high enthalpy flow wind tunnel. In this study, a semiconductor laser array is used to generate laser-supported plasmas in a linear-like nozzle as a first step of spatially uniform high enthalpy flow generation. In the experiment, we fabricated a device in which a working gas is heated up to become high density plasmas by a semiconductor laser with a convex lens. As the result, we observed high intensity irradiation by the laser plasma at the ignition but could not obtain stable laser supported plasmas. Having put together with the result of numerical analysis, we concluded that higher-output laser is required to have stable laser supported plasmas and high enthalpy flow.

未来空间开发和空间环境利用的发展需要新一代高焓流风洞。在这项研究中，一个半导体激光器阵列被用来产生激光支持的等离子体在一个线性的喷嘴作为空间均匀的高焓流产生的第一步。在实验中，我们制作了一个装置，其中工作气体被加热，成为高密度等离子体的半导体激光器与凸透镜。结果，我们观察到高强度的激光等离子体的照射在点火，但不能获得稳定的激光支持等离子体。结合数值分析的结果，我们得出了高输出激光器必须具有稳定的激光支持等离子体和高焓流的结论。