Preparation and Properties of Thin Film by Plasma-Assisted CVD for CO_2 Laser Lens
Preparation and Properties of Thin Film by Plasma-Assisted CVD for CO_2 Laser Lens
批准号:
63890015
负责人:
NAKAMURA Shigeaki
金额:
$3.9万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research
财政年份:
1988
资助国家:
日本
项目状态:
已结题
起止时间:
1988 至 1990
中文摘要
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英文摘要
1. Preparation of KC1 and NaC1 crystals. The growth of KC1 crystals, 80phix70mm, was carried on from the liquid by Automatic pull-up device TK-P1. The growth temperature was controlled as follows :Also, Nac1 crystal was formed on the same method.2. Fabrication of lens. The crystals were polished with the abrasives (Water, Liquid paraffin, Ethyl alcohol, Carborundum #500, 800, 1200, and Alumina 0.05 mu) and the dishes to form the lens of 5o and 60 mm focal distances, 60 and 70 mm in diameter, and 28 and 32mm in thickness.3. Thin film coating. Thin films on the surface of crystals were prepared better by PVD than plasma-assisted CVD to preserve the crystal lens from deliquescence and breakdown. The transmittance of film-coated lens was measured at 10.6mum in wavelength as follows :4.0.80-1.0mm of a hole was bored at high speed in the planks such as melapi wood and polyvinyl chlor using 17.5W cw CO_2 laser device (Assit gas N_2 : 2Kg/cm^2, XY-table speed : 300mm/s) with KC1//LiF lens. It is found that the present KC1//LiF can be employed instead of zinc selenide CO_2 lasers lens.
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通讯作者:
Shigeaki Nakamura: "Interfaces in Composite Materials" The 4th Conference of Material Recycle System at Government Industrial Research Institute, Shikoku. (1991)
Shigeaki Nakamura:“复合材料中的界面”第四届材料回收系统会议,四国政府工业研究所。
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吉岡捷爾: "高真空蒸着によるGe_<1-x>Se_x薄膜の形成と電気的光学的特性" 高松工業高等専門学校研究紀要. 25. 65-70 (1990)
K. Yoshioka:“高真空沉积Ge_<1-x>Se_x薄膜的形成及其电学和光学性质”高松国立技术学院研究公报25. 65-70 (1990)。
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吹田義一: 溶接学会論文集. 7(4). (1989)
Yoshikazu Suita:《焊接学会会议录》7(4) (1989)。
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中村茂昭: "MECHANICAL AND OPTICAL PROPERTIES OF TiN CVDーFILM ON CERAMIC" Chemistry Express. 5(5). (1990)
Shigeaki Nakamura:“陶瓷上 TiN CVD 薄膜的机械和光学特性”Chemistry Express 5(5)。
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