The relation between spatial electron and spin propagation in n-type GaAs based semiconductor structures

n型GaAs基半导体结构中空间电子与自旋传播之间的关系

• 批准号: 40915805
• 负责人: Professor Dr. Wolfgang Ossau
• 金额: --
• 依托单位: Lehrstuhl für Experimentelle Physik III
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2007
• 资助国家: 德国
• 起止时间: 2006-12-31 至 2014-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/40915805?language=en
• 关键词: relation; between; spatial; electron; spin

The goal of the proposed research is to find a quantitative connection between carrier and spin propagation in 3D and 2D n-type GaAs based semiconductor structures. Using a combination of complementary cw-optical techniques that encompass variants of spatially resolved photoluminescence and spatially resolved Hanle-MOKE spectroscopy, we will establish a clear cut connection between carrier and spin mobilities. These parameters will then form the basis to identify the underlying microscopic mechanisms that dominate spin propagation in different physical regimes. These efforts will finally put us in a position in which we are able to predict and verify work parameters for architectures that are based on spin transport.

所提出的研究的目标是找到一个定量之间的联系，在3D和2D的n型GaAs基半导体结构的载流子和自旋传播。使用互补的CW-光学技术，包括空间分辨的光致发光和空间分辨Hanle-MOKE光谱的变体的组合，我们将建立一个明确的载流子和自旋迁移率之间的连接。然后，这些参数将形成基础，以确定在不同的物理制度主导自旋传播的基本微观机制。这些努力最终将使我们能够预测和验证基于自旋输运的架构的工作参数。