The relation between spatial electron and spin propagation in n-type GaAs based semiconductor structures

本研究的目的是在三维和二维n型GaAs基半导体结构中找到载流子和自旋传播之间的定量联系。利用互补连续波光学技术的组合，包括空间分辨光致发光和空间分辨Hanle-MOKE光谱的变体，我们将在载流子迁移率和自旋迁移率之间建立明确的联系。然后，这些参数将形成基础，以确定在不同物理机制中主导自旋传播的潜在微观机制。这些努力最终将使我们能够预测和验证基于自旋输运的体系结构的工作参数。

The goal of the proposed research is to find a quantitative connection between carrier and spin propagation in 3D and 2D n-type GaAs based semiconductor structures. Using a combination of complementary cw-optical techniques that encompass variants of spatially resolved photoluminescence and spatially resolved Hanle-MOKE spectroscopy, we will establish a clear cut connection between carrier and spin mobilities. These parameters will then form the basis to identify the underlying microscopic mechanisms that dominate spin propagation in different physical regimes. These efforts will finally put us in a position in which we are able to predict and verify work parameters for architectures that are based on spin transport.