Efficient Subharmonically Locked THz Indium Phosphide Heterojunction Bipolar Transistor Circuits for Mobile Applications ((2)-C11)
Efficient Subharmonically Locked THz Indium Phosphide Heterojunction Bipolar Transistor Circuits for Mobile Applications ((2)-C11)
适用于移动应用的高效次谐波锁定太赫兹磷化铟异质结双极晶体管电路 ((2)-C11)
批准号：
418894620
负责人：
金额：
$0.0万
依托单位国家：
德国
项目类别：
CRC/Transregios
财政年份：
2019
资助国家：
德国
项目状态：
已结题
起止时间：
2018-12-31 至 2019-12-31
中文摘要
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英文摘要
Efficient, compact, beam-steered electronic sources are needed in mobile THz sensing and localization applications. The subharmonic injection locking of push-push induim phosphide (InP) heterojunction bipolar transistor (HBT) oscillator cores is investigated. InP HBT circuits with locking input targeting 500 GHz signal generation are designed, measured and analyzed at UDE, the fabrication is done in an available foundry service. A detailed model of the subharmonic injection locking process is developed, and measured performance in terms of output power, power efficiency, and locking range are investigated.
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