Efficient Subharmonically Locked THz Indium Phosphide Heterojunction Bipolar Transistor Circuits for Mobile Applications ((2)-C11)

在移动的THz传感和定位应用中需要高效、紧凑、波束可控的电子源。研究了推挽式InP异质结双极晶体管（HBT）振荡器芯的次谐波注入锁定。锁定输入目标为500 GHz信号产生的InP HBT电路的设计，测量和分析在UDE，制造是在一个可用的代工服务。的分谐波注入锁定过程的详细模型的开发，并测量性能的输出功率，功率效率，和锁定范围进行了研究。

Efficient, compact, beam-steered electronic sources are needed in mobile THz sensing and localization applications. The subharmonic injection locking of push-push induim phosphide (InP) heterojunction bipolar transistor (HBT) oscillator cores is investigated. InP HBT circuits with locking input targeting 500 GHz signal generation are designed, measured and analyzed at UDE, the fabrication is done in an available foundry service. A detailed model of the subharmonic injection locking process is developed, and measured performance in terms of output power, power efficiency, and locking range are investigated.