Formation mechanism of the segregation layer of reactive metals to the bonding interface in brazing alloy joining for metal/ceramics and structure cotrol of joining
Formation mechanism of the segregation layer of reactive metals to the bonding interface in brazing alloy joining for metal/ceramics and structure cotrol of joining
批准号:
02452250
负责人:
MINEGISHI Tomoya
金额:
$1.73万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991
中文摘要
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英文摘要
(1) Generation of like thermally stimulated current (TSC) was observed by using the couple was consisted ceramics/metal at elvated temperature. Metals were used Al, Cu, Ti, Pt, W and Mo. Ceramicses were used SiC, Al_2O_3, ZrO_2, Si_3N_4, AlN and ZrB_2. These ceramics/metal couples are generated electromotive force which is differntly character as conventional thermally EMF at elevate temperature. These temperature were observed from adjacent to increasing of electroconductivity of ceramics. These polarization curves has been depended temperature but has been maximum EMF. EMF are held always negative potential on side of ceramics above brazing TEMP. As 1100 k.(2) Reactive element are segregated on the interface of ceramics by using brazers which is included reactive metal such as VI a family Ti, Zr, Hf.(3) For explain these segregation mechanism, we are assumed that these EMF be made make driving force are generated ag brazing TEMP. . Then we are added electric field from out side of couple. Segregation of reactive metals are disappeared by ceramics are made positive pole. Reverse are segregated. Therefore, we are explained that segregation to the interface of ceramics are caused by generation of peculiary thermally EMF on interface ceramics/metal couple.(4) Thickness of segragation layer are controlled by outside electric field with small current. Namely, thickness of layer are propotionaly depended by factors of current and time. TEMP. Are not depended.
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峯岸 知弘: "金属・セラミックス接合界面における活性金属の電解誘起偏析" 日本金属学会会報. 29. 948-953 (1990)
Tomohiro Minegishi:“金属-陶瓷接合界面处活性金属的电解诱导偏析”日本金属研究所公报 29. 948-953 (1990)。
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峯岸 知弘: "セラミックス/金属ろう接界面の活性金属の電界誘起偏析と偏析組織の電界制御" 日本金属学会誌.
Tomohiro Minegishi:“陶瓷/金属钎焊界面处活性金属的电场诱导偏析以及偏析结构的电场控制”日本金属学会杂志。
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T.Minegishi: "Electric fieldーassisted and fieldーdepressed segregation of reactive metals to the bonding interface in braze alloy joining" J.of Materials Science. 26. 5473-5480 (1991)
T. Minegishi:“钎焊合金连接中活性金属在电场辅助和场抑制作用下偏析到接合界面”J.of Materials Science 26. 5473-5480 (1991)。
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峯岸 知弘,諸住 正太郎,桜井 健夫: "金属・セラミクス接合界面における活性金属の電界誘起偏析" 日本金属学会会報. 29. 948-953 (1990)
Tomohiro Minegishi、Shotaro Morozumi、Takeo Sakurai:“金属陶瓷接合界面处的电场诱导的活性金属偏析”日本金属研究所通报 29. 948-953 (1990)。
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峯岸 知也: "セラミックス/金属ろう接界面の活性金属の電界誘起偏析と偏析組織の電界制御" 日本金属学会誌(1991年4月、10月、1992年4月金属学会講演発表).
Tomoya Minegishi:“电场诱导的活性金属在陶瓷/金属钎焊界面处的偏析以及偏析结构的电场控制”日本金属学会期刊(1991年4月、1991年10月、1992年4月日本金属学会讲座)。
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