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Study of Crystal Surfaces by Ion Surface Blocking

通过离子表面阻挡研究晶体表面

基本信息

批准号：
03452078
负责人：
MANNAMI Michihiko
金额：
$ 3.26万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452078/
关键词：
surface blocking glancing angle scattering of fast ions charge exchange at surface surface stopping power surface defects surface distortion

项目摘要

The blocking effect at surface atomic planes on ions scattered from surface atoms (surface blocking) was investigated in order to study crystal surfaces. Energy losses of the surface blocking ions were observed for 1 MeV He+ ions incident on an atomically clean (001) surface of a SnTe crystal under UHV conditions. The observed energy loss depends on the excite angle relative to the surface plane. A new method was proposed to determine the position dependent stopping power near the surface using surface blocking.A 90ﾟ sector magnetic spectrometer with inclined boundaries for two-directional focusing was designed for the surface blocking measurement. Using this spectrometer, ions scattered from successive atomic layers could be resolved in the energy spectra of the scattered ions from single crystal surfaces.Initial stage of epitaxial growth was investigated using glancing angle scattering of MeV light ions on crystal surfaces. It was shown that the surface is distorted during the epitaxial growth of Lead Charcogenides on SnTe(001) due to the formation of misfit dislocations.

为了研究晶体表面，研究了表面原子平面对从表面原子散射的离子的阻挡效应（表面阻挡）。在 UHV 条件下，观察到 1 MeV He+ 离子入射到 SnTe 晶体的原子清洁 (001) 表面时，表面阻挡离子的能量损失。观察到的能量损失取决于相对于表面平面的激发角度。提出了一种利用表面阻挡来确定近表面位置相关阻止本领的新方法。设计了具有倾斜边界的双向聚焦的90°扇形磁谱仪用于表面阻挡测量。使用该光谱仪，从连续原子层散射的离子可以在单晶表面散射离子的能谱中解析。利用MeV轻离子在晶体表面上的掠射角散射来研究外延生长的初始阶段。结果表明，在 SnTe(001) 上外延生长铅硫属化物期间，由于失配位错的形成，表面发生扭曲。