Study on electron and energy transfer in highly organezed aggregates by quantum beams

量子束研究高度有序聚集体中的电子和能量转移

基本信息

  • 批准号:
    04453164
  • 负责人:
  • 金额:
    $ 5.12万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
  • 财政年份:
    1992
  • 资助国家:
    日本
  • 起止时间:
    1992 至 1993
  • 项目状态:
    已结题

项目摘要

Langmuir Blodgett films of cyanin dye and arachiadic acid on the substrates or quarts were found to decompose very little by irradiation of UV and visible light, but to decompose markedly with gama radiation and electron beams in the atmosphere of Ar to yield very large G values. This large G value was considered to arize from the energy transfer from the substrate to the LB layrs, but was finally attributed to the attack of the radiolysis species of Ar in the gas phase. Gamma radiolysis and pulse radiolysis experiments of the cyanin dye solutions revealed that the major contribution to the decomposition of the dye comes from the Ar^+ ion species.Observation of the LB membranes with fluorescence microscope showed that the decomposition of the J aggregates of the dyes induced by radiation is largely affected by the domain structures of the J aggregates in the dye membranes, and the highly developped domains of the J agregates was found from the observation of the LB films to have highly … More ordered structure of the dye molecules and it was inferred that electron and energy transfers between the highly ordered and the less ordered molecules or the monomers of the dyes are deeply related to the decomposition reactions of the dyes.On the other hand, the LB membranes of the arachiadic acid on the substrates of silicon were prepared and their XPS spectra showed that the strong chemical interactions exist between the arachiadic acid molecules and the silicon atoms on the surface of the substrates. Based on this experimental results, the thin membranes of dioctadecyl-dithiocarbamate (DOTC) on the substrate of GaAs were prepared using electrochemical deposition method to cheek the possibility of stabilizing the dangling bonds of the GaAs surfaces with the sulfur atoms in the DOTC layrs that become stable and thin isulator. The XPS spectra of the membranes showed that chemical bonds are formed between the sufur atoms in DOTC and the As atoms in the surface of GaAs, and the density of the surface states of the samples was found from their photoluminescence spectra to be reduced markedly with this treatment. Less
蓝染料和花生四氢酸在衬底或石英上的朗缪尔布洛吉特膜在紫外光和可见光的照射下几乎不分解,但在Ar气氛中随着伽马辐射和电子束的照射而显著分解,产生很大的G值。这种大的G值被认为是从底物到LB层的能量转移导致的,但最终归因于气相中Ar的辐解物种的攻击。染料溶液的伽马辐解和脉冲辐解实验表明,染料分解的主要贡献来自于Ar~(++)离子物种。荧光显微镜观察表明,染料膜中J聚集体在辐射诱导下的分解很大程度上受染料膜中J聚集体的区域结构的影响,从观察到的LB膜中发现J聚集体的高度发达的区域具有很高的…另一方面,制备了花生四氢酸在硅衬底上的LB膜,其XPS光谱表明花生四氢酸分子与衬底表面的硅原子之间存在着较强的化学作用。在此基础上,采用电化学沉积的方法,在砷化镓衬底上制备了双十八烷基二硫代氨基甲酸酯(DOTC)薄膜,考察了DOTC层中硫原子稳定表面悬键的可能性,使DOTC层中的硫原子成为稳定而薄的异构体。薄膜的XPS谱表明,DOTC中的硫原子与GaAs表面的As原子之间形成了化学键,从样品的光致发光光谱可以看出,样品的表面态密度明显降低。较少

项目成果

期刊论文数量(43)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Keisuke Asai, Kenkichi Ishigure et al: "An application of electrolytic deposition for the electronic passivation of GaAs surface through the formation of the films" Surface Science. (in print). (1994)
Keisuke Asai、Kenkichi Ishigure 等人:“通过形成薄膜,电解沉积在 GaAs 表面电子钝化中的应用”表面科学。
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    0
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浅井 圭介、広石 大介 石榑 顕吉 他: "The effects of Gamma lrradiation on Chromophor Aggregation in Monolayer Assemblies" Radiation Research. 1. 297 (1991)
Keisuke Asai、Daisuke Hiroishi、Kenkichi Ishigure 等人:“伽玛辐射对单层组件中发色团聚集的影响”辐射研究 1. 297 (1991)。
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    0
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浅井圭介、石榑顕吉他: "An application of electrolytic deposition for the electronic passivation of GaAs surface the formation of thin organic films" Surface Science. 1-5 (1994)
Keisuke Asai、Kenkichi Ishiguro 等人:“电解沉积在 GaAs 表面电子钝化中的应用,形成有机薄膜”表面科学 1-5 (1994)。
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    0
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石榑顕吉,広石大介,浅井圭介: "シアニン色素LB膜系の放射線化学" 東大原子力研究総合センター年報. 20. 74-74 (1993)
Kenkichi Ishiguro、Daisuke Hiroishi、Keisuke Asai:“花青染料 LB 胶片系统的辐射化学”东京大学原子能研究中心年度报告 20. 74-74 (1993)。
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    0
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浅井圭介、石榑顕吉他: "電解析出法を用いた有機薄膜形成によるGaAs表面の安定化" 第46回コロイド界面化学討論会要旨集. 46. 16-17 (1993)
Keisuke Asai、Kenkichi Ishigure 等人:“使用电解沉积形成有机薄膜来稳定 GaAs 表面”第 46 届胶体表面化学研讨会摘要 46. 16-17 (1993)。
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ISHIGURE Kenkichi其他文献

ISHIGURE Kenkichi的其他文献

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{{ truncateString('ISHIGURE Kenkichi', 18)}}的其他基金

Study on Electrochemical Corrosion Potential of Stainless Steel in High Temperature Water under Irradiation of Ionizing Radiation
电离辐射辐照下不锈钢在高温水中电化学腐蚀电位的研究
  • 批准号:
    14380238
  • 财政年份:
    2002
  • 资助金额:
    $ 5.12万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study on New Water Chemistry Control for Stabilization of Oxide Films in Coolant Systems of Light Water Reactors
轻水堆冷却剂系统氧化膜稳定的新型水化学控制研究
  • 批准号:
    09558057
  • 财政年份:
    1997
  • 资助金额:
    $ 5.12万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Fabrication of functional materials into mesoscopic structures using quantum beams and application of those structures to optical devices with ultra-fast response
使用量子束将功能材料制造成介观结构,并将这些结构应用于具有超快响应的光学器件
  • 批准号:
    09480096
  • 财政年份:
    1997
  • 资助金额:
    $ 5.12万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
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