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Filling control and Mott transitin in 3d transition metal oxides

Filling control and Mott transitin in 3d transition metal oxides
3d 过渡金属氧化物中的填充控制和莫特转变
批准号:
06452055
负责人:
TOKURA Yoshinori
金额:
$4.67万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 1995

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中文摘要
翻译
(1)本文系统地研究了<1-x>不同稀土离子R(=La,Pr,Nd,Sm,Y)对R_Ca_xTiO_3的光学光谱的影响。R_Ca_xTiO_3是一个典型的三维关联电子系统,其电子关联强度(U/W)和能带填充(n)分别随R和Ca浓度X的变化而变化。随着n从1减小,Mott-间隙激发的光谱塌陷并且Drude部分演化。我们发现,当U/W接近带宽控制的Mott跃迁临界值(U/W)_c时,Drude部分随名义空穴掺杂水平delta(=1-n)的演化速率急剧增加。(2)本文研究了掺杂诱导的La_ Sr_xVO_(3 ')的绝缘体-金属(I-M)转变的电磁和光学性质的变化<1-x>,其中LaVO_3是一种3d^2莫特绝缘体。在光谱中,I-M跃迁的特征在于掺杂引起的光谱权重向I的转移。 关于我们 n-能隙区临界磁相界附近金属相的电阻率在很宽的温度范围内(2- 200 K)表现出如下的温度依赖关系:ρ o = ρ o + Δ T_(?<1.5>)(3)RNiO_3具有低自旋态的3d^7构型的Ni^&lt;3+&gt;离子(即,旋转1/2)。与RTiO_(3 ')的情况相似,该体系在室温下的光谱表明,在很宽的能量范围内存在光谱重量转移我们还测量了NdNiO_(3+)在温度变化下的光谱,在200 K下经历了从顺磁金属到反铁磁绝缘体的相变,发现了在200 K以下的电荷能隙的开放以及在0.3eV以上的能量范围内丢失的光谱权重的重新分布。少
英文摘要
(1) Optical spectra have been systematically investigated for R_<1-x>Ca_xTiO_3 with various rare earth ions R (=La, Pr, Nd, Sm, and Y) as a typical three-dimensional correlated electron system , in which both the electron-correlation strength (U/W) and the band filling (n) can be varied by means of changes of R and Ca concentrasion X,respectively. With a decrease of n from 1, the spectrum of the Mott-gap excitation collapses and the Drude part evolves. We found that the rate of the Drude-part evolution with the nominal hole-doping level delta (=1-n) is critically enhanced as U/W approaches the critical value (U/W)_c for the band width-control Mott transition.(2) Changes in electrical magnetic, and optical properties have been investigated for the doping-induced insulator-metal (I-M) transition in La_<1-x>Sr_xVO_<3'> where the end compound LaVO_3 is a 3d^2 Mott insulator. In the optical spectra, the I-M transition is characterized by doping-induced transfer of spectral weight into the i … More n-gap region. Resistivity in the metallic phase near the critical magnetic phase boundary shows such a temperature dependence as expressed by the relation rho=rho+AT^<1.5> over a wide temperature range (2-200K) with the enhanced coefficient A towards the phase boundary Such resultsccan be explained in terms of the effect of the antiferromagnetic spin fluctuation on the charge transport.(3) RNiO_3 has the Ni^<3+> ion in the 3d^7configuration with low-spin state (i.e., spin 1/2). and shows metallic or insulating behavior depending on the ionic rarius of the R,as is similar to the case of RTiO_<3'> We investigated optical spectra of this system at room temperature, and found spectral weight transfer over a wide energy range (up to several eV) with the changes of R.We also measured the optical spectrum under variation of temperature for NdNiO_<3, > which undergoes a phase transition from a paramagnetic metal to an antiferromagnetic insulator at 200K,and found the opening of a charge gap below 200K as well as the redistribution of the missing spectral weight over the energy range above 0.3 eV. Less
期刊论文(130)
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会议论文
Y.Tokura: "Giant magnetotransport phenomena in filling-controlled Kondo lattice system : La_<1-x>Sr_xMnO_3" Journal of the Physical Society of Japan. 63. 3931-3935 (1994)
Y.Tokura:“填充控制的近藤晶格系统中的巨磁输运现象:La_<1-x>Sr_xMnO_3”日本物理学会杂志。
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H. Yoshizawa: "Neutron-diffraction study of the magnetic-field-induced metal-insulator transition in Pr_<0.7>Ca_<0.3>MnO_3" Physical Review B. 52. R13145-R13148 (1995)
H. Yoshizawa:“Pr_<0.7>Ca_<0.3>MnO_3 中磁场感应金属-绝缘体转变的中子衍射研究”物理评论 B.52. R13145-R13148 (1995)
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Y. Tomioka: "Anomalous magnetotransport properties of Pr_<1-x>Ca_xMnO_3" Journal of the Physical Society of Japan. 64. 3626-3630 (1995)
Y. Tomioka:“Pr_<1-x>Ca_xMnO_3 的异常磁输运特性”,日本物理学会杂志。
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T.Katsufuji et al.: "Anomalous variation of phonon Raman intensities near the metal-to-Mott-insulator transition in titanium oxide system" Physical Review B. 50. 2704-2707 (1994)
T.Katsufuji 等人:“氧化钛系统中金属到莫特绝缘体转变附近声子拉曼强度的异常变化”物理评论 B. 50. 2704-2707 (1994)
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61
    Control of anisotropic charge and orbital property in quasi-two dimensional transition metal oxides
    • 批准号:
      20340086
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    • 资助金额:
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    • 财政年份:
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    • 项目类别:
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    • 资助金额:
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    • 财政年份:
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    • 依托单位:
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    • 批准号:
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    • 项目类别:
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    • 资助金额:
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