Development of Ceramics/metal Multiple Layered Films with High Strength and Ductility

本工作的目的是开发由陶瓷和金属薄膜组成的具有新的机械和物理性能的多层薄膜。为了制备这样一层薄膜，离子束溅射装置得到了发展，其中一些设计已经满足了样品可以在高真空条件下制备和沉积可以按原子顺序进行的要求。采用离子束溅射和射频磁控溅射制备了碳化硅薄膜和铝/碳化硅多层薄膜，并对其原子结构进行了研究。得到的结果如下：1。在低于573 K的温度下，在（001）Si衬底上制备了碳化硅薄膜，薄膜具有非晶结构（a-Si_<1-x>C_x）。红外测量、X射线衍射和透射电子衍射结果表明，C原子在薄膜中分布均匀，在C摩尔分数O<等于或小于>X<等于或小于>0.5.2范围内，C原子的配位数为4倍。在a-Si_<0.5>C_<0.5> (a-Sic)薄膜的RHEED谱图中观察到的光晕峰位置与x射线和透射电子衍射谱图中观察到的光晕峰位置不同。从这些数据的比较可以看出，表面最近的相邻原子之间的距离比薄膜中的原子之间的距离长，并且从扭曲的微晶模型可以看出，表面层中的结构比薄膜中的结构更扭曲。对a-SiC/Al/ a-SiC三层薄膜的反射电子衍射和俄歇电子能谱分析发现，在Al/a-SiC界面处可能存在薄的反应层。当三倍。在673 K以上退火层状膜，界面处形成Si沉淀层和Al_4C_3层。

The purpose of the present work is to dvelope the multiple layer films composed of ceramics and metal films, having new mechanical and physical properties. In order to fabricate such a layer film, ion beam sputtering device was developed, in which some designs have been made to meet the requirements that the specimens can be prepared in high vacuum and that the deposition can be carried out with the atomic order. Silicon carbide films and alminium/silicon carbide multiple layer films were deposited by the ion beam sputtering and r.f. magnetron sputtering devices, and their atomic structures were studied. The results obtained are as follows.1. Silicon carbide films were made on (001) Si wafer substrates at the temperatures below 573 K, and they had amorphous structures (a-Si_<1-x>C_x). It is shown from IR measurements, X-ray diffraction and transmision electron diffraction that C atoms are distributed uniformly in the films, and that the coordination number of C atoms is four-fold in the C mole fraction range of O<equal or less than>X<equal or less than>0.5.2. The positions of halo peaks observed in RHEED profiles for a-Si_<0.5>C_<0.5> (a-Sic) films differ from those observed in X-ray and transmission electron diffraction profiles. From a comparison of these data it can be considered that distance between the nearest neighbor atoms at the surface is longer than that in the film, and also from the distorted micro-crystalline model it is suggested that the structure in th surface layer is more distorted than in the film.3. Reflection electron diffraction and Auger electron spectroscopy of a-SiC/Al/a-Sic triple layer films found that some thin reaction layer might exist at the Al/a-SiC interface. When the triple. layered films were annealed above 673 K, Si presipitates and Al_4C_3 layer were formed at the interface.