Comparison of dislocation behaviors between FCC metals and C60 crystals.

研究了C60和C70晶体的位错特性：(1)晶体的生长和完善：用气相法生长了C60和C70晶体。在C60晶体中生长的位错密度为10^&lt；3-4&gt；cm^&lt；-2&gt；从晶体的边缘引入滑移位错。(2)C60晶体中的滑移系，观察到滑移系为{111}&lt；110&gt；(3)位错与光的相互作用。显微硬度随温度的变化表现出反常的行为，即在400K时硬度达到最大值。我们解释这是由于光诱导产生的光诱导产物。(4)结论位错与光的相互作用强烈地依赖于晶体结构。然而，位错的物理性质是由于分子和键的特性所致。

We investigated the characteristics of dislocations of C60 and C70 crystals.(1)Crystal growth and perfection.C60 and C70 crystals were grown from vapor method. The grown-in dislocation density was the order of 10^<3-4> cm^<-2> in C60 crystals. Slip dislocations were introduced from the edges of the crystal. The Burgers vectors of those dislocations were determined as b=1/ [110] by using X-ray topographs.(2) Slip systems in C60 crystals.Slip systems were observed to be a {111} <110> using an etch-pit method in the temperature range than 240K to 450K.This slip system was the same as that of FCC metals.(3) Interaction between dislocations and light.The temperature dependence of micro-hardness showed the anomalous behavior, that was that the hardness had a maximum at 400K.We explained that this was due to photo-induced products which were produced by light.(4) conclusionSlip systems were strongly depended on the crystal structures. However, physical properties of dislocations were due to characteristics of the molecules and the bondings.