Comparison of dislocation behaviors between FCC metals and C60 crystals.

研究了C_（60）和C_（70）晶体中位错的特征。（1）晶体的生长与完善采用气相法生长了C60和C70晶体。在C_（60）晶体中，生长位错密度约为10 μ <3-4>cm ~ 2<-2>量级。滑移位错从晶体的边缘引入。用X射线形貌图确定了位错的Burgers矢量为B=1/ [110]。(2)C_（60）晶体中的滑移系：<110>在240 ~ 450 K温度范围内，用蚀坑法观察到滑移系为{111}，与面心立方金属的滑移系相同。(3)位错与光的相互作用：显微硬度随温度的变化表现出反常的行为，即硬度在400 K处出现最大值，这是由于光诱导产生的光致产物所致。(4)结论滑移系对晶体结构有很强的依赖性。然而，位错的物理性质是由于分子和键的特性。

We investigated the characteristics of dislocations of C60 and C70 crystals.(1)Crystal growth and perfection.C60 and C70 crystals were grown from vapor method. The grown-in dislocation density was the order of 10^<3-4> cm^<-2> in C60 crystals. Slip dislocations were introduced from the edges of the crystal. The Burgers vectors of those dislocations were determined as b=1/ [110] by using X-ray topographs.(2) Slip systems in C60 crystals.Slip systems were observed to be a {111} <110> using an etch-pit method in the temperature range than 240K to 450K.This slip system was the same as that of FCC metals.(3) Interaction between dislocations and light.The temperature dependence of micro-hardness showed the anomalous behavior, that was that the hardness had a maximum at 400K.We explained that this was due to photo-induced products which were produced by light.(4) conclusionSlip systems were strongly depended on the crystal structures. However, physical properties of dislocations were due to characteristics of the molecules and the bondings.