PREPARATION AND ITS PROPERTIES OF ORIENTED SnO_2 THIN FILMS

1994年，该研究通过修改后的路线顺利推进了这一目标。通过在有机锡化合物的中心原子Sn中引入所需的取代基来开发一种新的源化合物是困难的。因此，本文采用蒸汽压测量和质谱分析了其热分解过程的二乙酸二丁基锡和四丁基锡作为源化合物。此外，新设计的超声波喷雾热解装置在操作条件的确定上也存在困难。结果，在玻璃基板上进行了薄膜沉积的运行。在480℃以下的低温下，制备了具有（110）或（200）晶面的高取向氧化锡薄膜。取向膜的微观结构可能与沉积条件有关。1995年阐明了取向薄膜的电学和光学性质。取向膜的电阻率约为1 ω，透过率约为85%。在取向膜中加入锑或氟作为掺杂剂对降低电阻率非常有效。上述发现也在三次会议和我们的三篇研究论文中提出。因此，这个为期两年的研究项目的目标已经显著实现。将这些取向薄膜应用于透明电极和新型薄膜衬底将是本项目的下一个目标。

In 1994, the study was favorably advanced to the goal via the modified routes. The development of a novel source compound by the introducion of desired substitutional groups into the central atom, Sn, of organotin compound was difficult. Therefore, both di-butyltin-di-acetate and tetra-butyltin, of which the thermal decomposition processes had been analyzed by vapor pressure measurement and mass spectroscopy, were used as source compounds here. Further, a newly designed ultrasonic spray pyrolysis apparatus also was working with difficulty in the determination of the operation conditions. As a result, the runs for film deposition on a glass substrate were performed with the present apparatus. Highly oriented tin oxide thin film with (110) or (200) crystalline plane was obtained at a low temperature below 480ﾟC.The microstructure of this oriented films were possibly related to the deposition conditions. In 1995, the electrical and optical properties of the oriented thin films were clarified. The resistivity and transmittance of the oriented film was about 1 OMEGAcm and 85%, respectively. The addition of antimony or fluorine added to the oriented film as a dopant was extremely effective for lowering the resistivity. The above-mentioned findings have been also presented at the three meetings and in our three research papers. Consequently, the objective of this two-year research project has been significantly attained. The applications of these oriented films to a transparent electrode and a novel thin film substrate will be next goals of this project.