Bipolar Materials Based on N-heterocycles for Novel Memory Applications (C07*)

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The goal of this project is to explore ferroelectrics based on N-heterocycles as active material in nonvolatile rewritable resistive memories. We will explore planar and near-planar N-heterocycles dressed with dipolar side groups like (thio)amides to obtain order-disorder ferroelectrics with unprecedented functionality, including a ferroelectrically-switchable, rectifying bulk conductivity. In addition, we target 1, 2 and 3D displacive ferroelectric materials based on stacks of alternating donor and acceptor molecules. Here, the N-heterocycles will act as electron donating moiety and Fx-TCNQ (x = 0,2,4,6) as electron accepting moiety.