Analysis of device characteristics of organic field-effect transistor based memories by infrared and raman spectroscopy

在本研究中，我们旨在利用微拉曼光谱，揭示有机场效应晶体管记忆体运作后，有源层有机分子微结构的变化。然而，这些结果并不足以说明微观结构的变化。因此，红外光谱被应用于更灵敏的分析，这项技术可以分析微结构的变化。我们报道了一种基于有机场效应晶体管的有机存储器件的电学特性，该器件使用尼龙11薄膜作为栅电介质。

In this study, by using micro-raman spectroscopy, we aimed to reveal the changes in microstructure of organic molecules in active layer after the operation of organic field-effect transistor based memories. However, the results were not sufficient to indicate the changes in microstructure. Thus, infrared spectroscopy was applied as more sensitive analysis, and this technique allowed for the analysis of the changes in microstructure.And we reported the electrical properties of an organic memory device based on an organic field-effect transistor using a thin film of nylon 11 as a gate dielectric.