Analysis of device characteristics of organic field-effect transistor based memories by infrared and raman spectroscopy

在本研究中，我们利用微拉曼光谱来揭示基于有机场效应晶体管的存储器运行后有源层中有机分子的微观结构变化。然而，结果不足以表明微观结构的变化。因此，红外光谱被用作更灵敏的分析，并且该技术允许分析微观结构的变化。我们报道了一种基于有机场效应晶体管的有机存储器件的电学性能，该器件使用尼龙11薄膜作为栅极电介质。

In this study, by using micro-raman spectroscopy, we aimed to reveal the changes in microstructure of organic molecules in active layer after the operation of organic field-effect transistor based memories. However, the results were not sufficient to indicate the changes in microstructure. Thus, infrared spectroscopy was applied as more sensitive analysis, and this technique allowed for the analysis of the changes in microstructure.And we reported the electrical properties of an organic memory device based on an organic field-effect transistor using a thin film of nylon 11 as a gate dielectric.